MG1200FXF1US51 Datasheet PDF - Toshiba
| Part Number | MG1200FXF1US51 | |
| Description | TOSHIBA GTR Module Silicon N-Channel IGBT | |
| Manufacturers | Toshiba | |
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MG1200FXF1US51
Preliminary TOSHIBA GTR Module Silicon N-Channel IGBT
MG1200FXF1US51
High Power Switching Applications
Motor Control Applications
· High input impedance
· Enhancement mode
· Electrodes are isolated from case.
Equivalent Circuit
C CC
C
G
E
E EE
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Peak 1 cycle surge current 10 ms (half sine)
Operating junction temperature
Storage temperature range
Isolation voltage
Terminal: M4/M8
Screw torque
Mounting
VCES
VGES
IC
ICP
IFSM
Tj
Tstg
VIsol
¾
3300
±20
1200
2400
10
-40~125
-40~125
6000 (AC 1 min)
2/7
4
V
V
A
A
kA
°C
°C
V
Nm
Caution: MG1200FXF1US51 has no short-circuit capability.
1 2001-09-05
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MG1200FXF1US51
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
5 2001-09-05
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| Part Number | Description | MFRS |
| MG1200FXF1US51 | The function is TOSHIBA GTR Module Silicon N-Channel IGBT. Toshiba | |
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