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PDF MF82M1-GNCAVXX Data sheet ( Hoja de datos )

Número de pieza MF82M1-GNCAVXX
Descripción 8/16-bit Data Bus Flash Memory Card
Fabricantes Mitsubishi 
Logotipo Mitsubishi Logotipo



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No Preview Available ! MF82M1-GNCAVXX Hoja de datos, Descripción, Manual

8/16-bit Data Bus
Flash Memory Card
Connector Type
Two- piece 68-pin
MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
MF82M1-GMCAVXX
MF84M1-GMCAVXX
MF88M1-GMCAVXX
MF816M-GMCAVXX
MF820M-GMCAVXX
MF832M-GMCAVXX
MF82M1-GNCAVXX
MF84M1-GNCAVXX
MF88M1-GNCAVXX
MF816M-GNCAVXX
MF820M-GNCAVXX
MF832M-GNCAVXX
DESCRIPTION
The MF8XXX-GMCAVXX is a flash memory card
which uses eight-megabit or sixteen megabit flash
electrically erasable and programmable read only
memory IC’s as common memory and a 64-kilobit
electrically erasable and programmable read only
memory as attribute memory.
The MF8XXX-GNCAVXX is a flash memory card
which uses eight-megabit or sixteen megabit flash
electrically erasable and programmable read only
memory IC’s.
FEATURES
68 pin JEIDA/PCMCIA
8/16 controllable data bus width
Buffered interface
TTL interface level
Program/erase operation by software
command control
100,000 program/erase cycles
Write protect switch
Operating temperature =0 to 70°C
.No Vpp required (5V Vcc only operation)
APPLICATIONS
Notebook computers Printers
Industrial machines
PRODUCT LIST
Item
Type name
MF82M1-GMCAVXX
MF84M1-GMCAVXX
MF88M1-GMCAVXX
MF816M-GMCAVXX
MF820M-GMCAVXX
MF832M-GMCAVXX
MF82M1-GNCAVXX
MF84M1-GNCAVXX
MF88M1-GNCAVXX
MF816M-GNCAVXX
MF820M-GNCAVXX
MF832M-GNCAVXX
Memory
capacity
2MB
4MB
8MB
16MB
20MB
32MB
2MB
4MB
8MB
16MB
20MB
32MB
Attribute
memory
Yes
No(FFh)
Data bus
width(bits)
8/16
Access
time (ns)
150
Memory
IC’s
8Mbit
16Mbit
8Mbit
16Mbit
Outline
drawing
68P-013
MITSUBISHI
ELECTRIC
1/22
Feb.1999 Rev2.0

1 page




MF82M1-GNCAVXX pdf
MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
COMMAND DEFINITION
The corresponding memories of the card are set to
read/write mode and the operation is
controlled by the software command written in the
control register.
COMMAND DEFINITION TABLE
Command
Read/Reset
Programme setup/
Programme
Erase Setup/
Erase Confirm
Programme
Suspend/Resume
Erase Suspend/
Resume
Read Status
Register
Clear Status
Register
Read Device
Identifier Code
Bus
cycles
1
2
2
2
2
2
1
2
Mode
Write
Write
Write
Write
Write
Write
Write
Write
First bus cycle
Address Data in
ZA FFh(FFFFh)
PA 40(4040)h
BA 20(2020)h
PA B0(B0B0)h
BA B0(B0B0)h
ZA 70(7070)h
ZA 50(5050)h
ZA 90(9090)h
Mode
-
Write
Second bus cycle
Address Data in
--
PA PD
Write
BA D0(D0D0)h
Write
PA D0(D0D0)h
Write
BA D0(D0D0)h
Read
ZA
-
--
-
Read DIA
-
Data out
-
-
-
-
-
RD
-
DID
Note 3: Indicates the basic functions of commands and should not write another commands.
Refer to the algorithms to operate.
Signal status is defined in function table and bus status.
Parenthesized data shows the data for 16 bit mode operation.
ZA=an address of a memory zone (Please refer to the memory zone)
PA=Programming address
PD=Programming data
BA=An address of a memory block (Please refer to the memory block)
RD=Data of status Register
DIA=Device identifier address
000000h for manufacturer code 000002h for device code
DID=Device identifier data
2MB=manufacturer code : 89 (8989)h device code : A6h (A6A6)h
Others=manufacturer code : 89 (8989)h device code : AA (AAAA)h
Read/Reset
The memory in the card is switched to read mode by
writing FFh (FFFFh for 16 bit operation) into
the control resister. This mode is maintained
until the contents of register are changed. This
mode needs to be written to every
memory zone to which access is required.
Programme Setup/Programme
The setup programme command sets up the card for
programming. It is applied when 40h (4040h for 16
bit operation) is written to control register.
Programming will take place automatically after
latching the address and data which are applied at
the rising edge of WE#.
The completion of programme can be confirmed by
reading status register.
(For details please refer to the algorithm)
Erase Setup/Erase confirm
The erase setup is a command to set up the memory
block for erasure. Writing setup erase command 20h
(2020h for 16 bit operation) in the control register
followed by erase confirm command D0h (D0D0h
for 16 bit operation) will initiate a erasure
operation. Erasing will take place automatically
after the rising edge of WE# controlled by a internal
timer. The completion of
erase can be confirmed by reading status register.
(For details please refer to the algorithm)
These commands will not erase all the data of a
memory card and should be repeated for all the
required memory blocks. At an eight bit access
mode it should be noticed that the erasure of a
memory block will result in odd byte or even byte
erasure.
MITSUBISHI
ELECTRIC
5/22
Feb.1999 Rev2.0

5 Page





MF82M1-GNCAVXX arduino
A
WRITE SUSPEND
COMMAND(B0h)
READ STATUS REGISTER
BIT 7.= 0”
CHECK PROGRAMME
STATUS BIT
BIT 7.= 1”
BI T 2.= 0”
CHECK PROGRAMME
SUSPEND BIT
BIT 2.= 1”
WRITE READ
COMMAND(FFh)
READ DATA
WRITE RESUME
COMMAND(D0h)
PROGRAMME SUSPEND PASSED
MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
B
WRITE SUSPEND
COMMAND(B0B0h)
READ STATUS REGISTER
BIT 7.AND.15.= 0”
CHECK PROGRAMME
STATUS BIT
BIT 7.AND.15.= 1”
CHECK PROGRAMME
SUSPEND BIT
BI T 2.AND.10.= 0”
BIT 2.AND.10.= 1”
WRITE READ
COMMAND(FFFFh)
READ DATA
WRITE RESUME
COMMAND(D0D0h)
PROGRAMME SUSPEND PASSED
Note 7: If Vcc error bit is detected, try to programme again at Vcc level.
This is a programme algorithm for a memory zone and not for a card.
Reading data from the zone generating programme suspend.
.OR. : =Logical or ; .AND. : =Logical and
MITSUBISHI
ELECTRIC
11/22
Feb.1999 Rev2.0

11 Page







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