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M40Z100WMH1TR Schematic ( PDF Datasheet ) - ST Microelectronics

Teilenummer M40Z100WMH1TR
Beschreibung NVRAM CONTROLLER for up to TWO LPSRAM
Hersteller ST Microelectronics
Logo ST Microelectronics Logo 




Gesamt 12 Seiten
M40Z100WMH1TR Datasheet, Funktion
M40Z111
M40Z111W
NVRAM CONTROLLER for up to TWO LPSRAM
CONVERT LOW POWER SRAMs into
NVRAMs
PRECISION POWER MONITORING and
POWER SWITCHING CIRCUITRY
AUTOMATIC WRITE-PROTECTION when VCC
is OUT-OF-TOLERANCE
CHOICE of SUPPLY VOLTAGES and
POWER-FAIL DESELECT VOLTAGES:
– M40Z111:
VCC = 4.5V to 5.5V
THS = VSS 4.5V VPFD 4.75V
THS = VOUT 4.2V VPFD 4.5V
– M40Z111W:
VCC = 3.0V to 3.6V
THS = VSS 2.8V VPFD 3.0V
VCC = 2.7V to 3.3V
THS = VOUT 2.5 VPFD 2.7V
LESS THAN 15ns CHIP ENABLE ACCESS
PROPAGATION DELAY (for 5.0V device)
PACKAGING INCLUDES a 28-LEAD SOIC
and SNAPHAT® TOP
(to be Ordered Separately)
SOIC PACKAGE PROVIDES DIRECT
CONNECTION for a SNAPHAT TOP which
CONTAINS the BATTERY
SNAPHAT (SH)
Battery
28
1
SOH28 (MH)
Figure 1. Logic Diagram
VCC
DESCRIPTION
The M40Z111/111W NVRAM Controller is a self-
contained device which converts a standard low-
power SRAM into a non-volatile memory.
A precision voltage reference and comparator
monitors the VCC input for an out-of-tolerance con-
dition.
Table 1. Signal Names
THS
Threshold Select Input
E Chip Enable Input
ECON
VOUT
VCC
VSS
Conditioned Chip Enable Output
Supply Voltage Output
Supply Voltage
Ground
THS
E
M40Z111
M40Z111W
VSS
VOUT
ECON
AI02238B
February 1999
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M40Z100WMH1TR Datasheet, Funktion
M40Z111, M40Z111W
Table 5B. DC Characteristics for M40Z111W
(TA = 0 to 70°C; VCC = 3V to 3.6V or 2.7V to 3.3V)
Symbol
Parameter
ILI (1)
ILO (1)
Input Leakage Current
Output Leakage Current
Test Condition
0V VIN VCC
0V VOUT VCC
ICC Supply Current
Outputs open
VIL Input Low Voltage
VIH Input High Voltage
VOL Output Low Voltage
IOL = 4.0mA
VOH Output High Voltage
IOH = –2.0mA
VOHB VOH Battery Back-up
IOUT2 = 1.0µA
IOUT1 VOUT Current (Active)
VOUT > VCC –0.3
VOUT > VCC –0.2
IOUT2 VOUT Current (Battery Back-up)
VOUT > VBAT –0.3
ICCDR Data Retention Mode Current
THS Threshold Select Voltage
VPFD
Power-fail Deselect Voltage (THS = 0)
Power-fail Deselect Voltage (THS = 1)
VSO Battery Back-up Switchover Voltage
Note: 1. Outputs deselected.
Min
–0.3
2.0
2.4
2.0
VSS
2.8
2.5
Typ Max Unit
±1 µA
±1 µA
2 4 mA
0.8 V
VCC + 0.3
0.4
V
V
V
2.9 3.6 V
100 mA
65 mA
100 µA
150 nA
VOUT
V
2.9 3.0 V
2.6 2.7 V
2.5 V
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M40Z100WMH1TR pdf, datenblatt
M40Z111, M40Z111W
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - All Rights Reserved
® SNAPHAT is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
STMicroelectronics GROUP OF COMPANIES
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