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STD3NK80Z Schematic ( PDF Datasheet ) - ST Microelectronics

Teilenummer STD3NK80Z
Beschreibung N-CHANNEL Power MOSFET
Hersteller ST Microelectronics
Logo ST Microelectronics Logo 




Gesamt 18 Seiten
STD3NK80Z Datasheet, Funktion
STD3NK80Z, STD3NK80Z-1
STF3NK80Z, STP3NK80Z
N-channel 800 V, 3.8 , 2.5 A, TO-220, TO-220FP, DPAK, IPAK
Zener-protected SuperMESH™ Power MOSFET
Features
Type
STP3NK80Z
STF3NK80Z
STD3NK80Z
STD3NK80Z-1
VDSS
(@Tjmax)
800 V
800 V
800 V
800 V
RDS(on)
< 4.5
< 4.5
< 4.5
< 4.5
ID
2.5 A
2.5 A
2.5 A
2.5 A
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
Application
Switching applications
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Table 1. Device summary
Order codes
STP3NK80Z
STF3NK80Z
STD3NK80ZT4
STD3NK80Z-1
Marking
P3NK80Z
F3NK80Z
D3NK80Z
D3NK80Z
TO-220
3
2
TO-220FP1
3
1
DPAK
IPAK
3
2
1
Figure 1. Internal schematic diagram
D(2)
G(1)
S(3)
AM01476v1
Package
TO-220
TO-220FP
DPAK
IPAK
Packaging
Tube
Tube
Tape and reel
Tube
September 2009
Doc ID 9565 Rev 6
1/18
www.st.com
18






STD3NK80Z Datasheet, Funktion
Electrical characteristics
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 2.5 A, VGS=0
ISD= 2.5 A,
di/dt = 100 A/µs,
VDD=50 V
(see Figure 21)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 2.5 A,
di/dt = 100 A/µs,
VDD=50 V, Tj=150 °C
(see Figure 21)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Min Typ. Max Unit
- 2.5 A
- 10 A
- 1.6 V
384
- 1600
8.4
ns
µC
A
474
- 2100
8.8
ns
µC
A
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
BVGSO(1) Gate-source breakdown voltage Igs=± 1mA (open drain) 30
-
-
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
6/18 Doc ID 9565 Rev 6

6 Page









STD3NK80Z pdf, datenblatt
Package mechanical data
Dim
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
P
Q
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
TO-220 mechanical data
Min
4.40
0.61
1.14
0.48
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
mm
Typ
1.27
16.40
28.90
Max
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
Min
0.173
0.024
0.044
0.019
0.6
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
inch
Typ
0.050
0.645
1.137
Max
0.181
0.034
0.066
0.027
0.62
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.151
0.116
12/18
Doc ID 9565 Rev 6

12 Page





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