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PDF MHPM6B25N120SL Data sheet ( Hoja de datos )
| Número de pieza | MHPM6B25N120SL | |
| Descripción | Hybrid Power Module | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Hybrid Power Module
Integrated Power Stage
for 460 VAC Motor Drives
These modules integrate a 3–phase inverter in a single
convenient package. They are designed for 2.0, 3.0, and 5.0 hp
motor drive applications. The inverter incorporates advanced
insulated gate bipolar transistors (IGBT) matched with fast soft
free–wheeling diodes to give optimum performance. The top
connector pins are designed for easy interfacing to the user’s
control board.
• Short Circuit Rated 10 µs @ 125°C, 720 V
• Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)
• Compact Package Outline
• Access to Positive and Negative DC Bus
• UL Recognized
ORDERING INFORMATION
Device
Current Rating
Package
MHPM6B10N120SL
MHPM6B15N120SL
MHPM6B25N120SL
10
15
25
464A–01
Style 1
MHPM6B10N120SS
MHPM6B15N120SS
MHPM6B25N120SS
10
15
25
464B–02
Style 1
MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted)
Rating
IGBT Reverse Voltage
Gate-Emitter Voltage
Continuous IGBT Collector Current (TC = 80°C)
Repetitive Peak IGBT Collector Current (1)
10A120
15A120
25A120
10A120
15A120
25A120
Continuous Diode Current (TC = 25°C)
10A120
15A120
25A120
Continuous Diode Current (TC = 80°C)
Repetitive Peak Diode Current (1)
10A120
15A120
25A120
10A120
15A120
25A120
IGBT Power Dissipation per die (TC = 95°C)
10A120
15A120
25A120
Diode Power Dissipation per die (TC = 95°C)
10A120
15A120
25A120
(1) 1.0 ms = 1.0% duty cycle
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola IGBT Device Data
© Motorola, Inc. 1998
Order this document
by MHPM6B10N120/D
MHPM6B10N120
MHPM6B15N120
MHPM6B25N120
SERIES
Motorola Preferred Devices
10, 15, 25 A, 1200 V
HYBRID POWER MODULES
SL SUFFIX
CASE 464A–01
Style 1
SS SUFFIX
CASE 464B–02
Style 1
Symbol
VCES
VGES
ICmax
IC(pk)
IFmax
IF80
IF(pk)
PD
PD
Value
1200
± 20
10
15
25
20
30
50
10
15
25
8.3
11
14
20
30
50
41
50
65
16
22
27
Unit
V
V
A
A
A
A
A
W
W
1
1 page  
MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES
TYPICAL CHARACTERISTICS
(see also application information)
2.5
td(on)
2.0
25°C
TJ = 125°C
1.5
TJ = 125°C
1.0 25°C
tr
0.5
VCE = 600 V
VGE = 15 V
RG = RG(RECOMMENDED)
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
IC, COLLECTOR CURRENT (NORMALIZED: IC/ICmax)
Figure 7. Inductive Switching Times versus
Collector Current
6.0
5.0
4.0
3.0
2.0 td(on)
25°C
TJ = 125°C
TJ = 125°C
25°C
1.0 tr
0
0 0.5 1.0 1.5 2.0 2.5 3.0
RG, GATE RESISTANCE
(NORMALIZED: RG/RG(RECOMMENDED))
Figure 8. Inductive Switching Times versus
Gate Resistance
2.5
Eon, TJ = 125°C
2.0
Eon, TJ = 25°C
1.5
1.0
Eoff, TJ = 125°C
Eoff, TJ = 25°C
0.5
VCE = 600 V
VGE = 15 V
RG = RG(RECOMMENDED)
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
IC, COLLECTOR CURRENT (NORMALIZED: IC/ICmax)
Figure 9. Turn–On and Turn–Off Energy
Losses versus Collector Current
3.0
Eon, TJ = 125°C
2.5 Eon, TJ = 25°C
2.0
Eoff, TJ = 125°C
1.5
1.0 Eoff, TJ = 25°C
VCE = 600 V
0.5 VGE = 15 V
IC = ICmax
0
0 0.5 1.0 1.5 2.0 2.5
RG, GATE RESISTANCE
(NORMALIZED: RG/RG(RECOMMENDED))
Figure 10. Turn–On and Turn–Off Energy
Losses versus Gate Resistance
3.0
100 1000
10
Irr
1.0 trr
TJ = 125°C
25°C
TJ = 125°C
25°C
V = 600 V
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
IF, FORWARD CURRENT (NORMALIZED: IF/IFmax)
Figure 11. Reverse Recovery Characteristics
— Free–Wheeling Diode
Ciss
100
Coss
10
Crss
1.0
0 5.0 10 15 20 25 30 35 40
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 12. Capacitance Variation
Motorola IGBT Device Data
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MHPM6B25N120SL.PDF ] | |
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