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PDF MHL18926 Data sheet ( Hoja de datos )
| Número de pieza | MHL18926 | |
| Descripción | PCS BAND RF LINEAR LDMOS AMPLIFIER | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MHL18926/D
The RF Line
PCS Band
RF Linear LDMOS Amplifier
Designed for ultra–linear amplifier applications in 50 Ohm systems operating
in the PCS frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for digital modulation systems, such as TDMA, GSM
EDGE and CDMA.
• Third Order Intercept Point: 50 dBm Typ
• Power Gain: 28.6 dB Typ (@ f = 1842 MHz)
• Excellent Phase Linearity and Group Delay Characteristics
• Ideal for Feedforward Base Station Application
MHL18926
1805–1880 MHz, 10 W, 28.6 dB
RF LINEAR LDMOS AMPLIFIER
CASE 301AY–01, STYLE 1
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
DC Supply Voltage
RF Input Power
Storage Temperature Range
Operating Case Temperature Range
Symbol
VDD
Pin
Tstg
TC
Value
30
+18
–40 to +100
–20 to +100
ELECTRICAL CHARACTERISTICS (TC = +25°C; VDD = 26 Vdc; 50 Ω System)
Characteristic
Symbol
Supply Current
Power Gain
Gain Flatness
Power Output @ 1 dB Compression
(f = 1842 MHz)
(f = 1805–1880 MHz)
(f = 1842 MHz)
IDD
Gp
GF
P1 dB
Input VSWR
Third Order Intercept
(f = 1805–1880 MHz)
(f1 =1839 MHz, f2=1844 MHz)
VSWRin
ITO
Noise Figure
(f = 1880 MHz)
NF
Min Typ Max
— 1.1 1.15
27.6 28.6 29.6
— 0.3 0.5
39 40 —
— 1.2:1 1.5:1
49.5 50
—
— 4.2
5
Unit
Vdc
dBm
°C
°C
Unit
A
dB
dB
dBm
dBm
dB
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
MMoOtoTroOla,RInOc.L2A00R3 F DEVICE DATA For More Information On This Product,
Go to: www.freescale.com
MHL18926
1
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