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PDF MH16S72BDFA-8 Data sheet ( Hoja de datos )
| Número de pieza | MH16S72BDFA-8 | |
| Descripción | 1 /207 /959 /552-BIT ( 16 /777 /216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM | |
| Fabricantes | Mitsubishi | |
| Logotipo |  |
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MITSUBISHI LSIs
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
PRELIMINARY
Some of contents are subject to change w ithout notice.
DESCRIPTION
The MH16S72BDFA is 16777216 - word x 72-bit
Sy nchronous DRAM module. This consist of eighteen
industry standard 16M x 4 Sy nchronous DRAMs in
TSOP.
The TSOP on a card edge dual in-line package prov ides
any application where high densities and large of
quantities memory are required.
This is a socket-ty pe memory m odule ,suitable f or
easy interchange or addition of module.
FEATURES
Type name
Max.
Frequency
CLK
Access Time
[component level]
MH16S72BDFA-7
MH16S72BDFA-8
100MHz
100MHz
6ns (CL = 2, 3)
6ns (CL = 3)
85pin 1pin
94pin
95pin
10pin
11pin
Utilizes industry standard 16M X 4 Synchronous DRAMs in
TSOP package , industrystandard Resistered buffer in TSSOP
package and industry standard PLL in TSSOP package
Single 3.3V +/- 0.3V supply
LVTTL Interface
Burst length 1/2/4/8/Full Page(programmable)
Burst W rite / Single W rite(programmable)
Auto precharge / All bank precharge controlled by A10
Auto refresh and Self refresh
4096 refresh cycles every 64ms
Discrete IC and module design conform to
PC/100 specification.
(module Spec. Rev. 1.2 and SPD 1.2A)
124pin 40pin
125pin 41pin
APPLICATION
Main memoryunit for computers, Microcomputer memory.
168pin 84pin
MIT-DS-0329-0.0
MITSUBISHI
ELECTRIC
19/Jun/1999 1
1 page  
MITSUBISHI LSIs
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
BASIC FUNCTIONS
The MH16S72BDFA provides basic functions,bank(row)activate,burst read / write,
bank(row)precharge,and auto / self refresh.
Each command is defined by control signals of /RAS,/CAS and /WE at CK rising edge. In
addition to 3 signals,/S,CKE and A10 are used as chip select,refresh option,and
precharge option,respectively.
To know the detailed definition of commands please see the command truth table.
CK
/S Chip Select : L=select, H=deselect
/RAS
Command
/CAS
/WE
Command
Command
def ine basic commands
CKE
Ref resh Option @ref resh command
A10
Precharge Option @precharge or read/write command
Activate(ACT) [/RAS =L, /CAS = /WE =H]
ACT command activates a row in an idle bank indicated by BA.
Read(READ) [/RAS =H,/CAS =L, /WE =H]
READ command starts burst read from the active bank indicated by BA.First output
data appears after /CAS latency. When A10 =H at this command,the bank is
deactivated after the burst read(auto-precharge,READA).
Write(WRITE) [/RAS =H, /CAS = /WE =L]
WRITE command starts burst write to the active bank indicated by BA. Total data
length to be written is set by burst length. When A10 =H at this command, the bank
is deactivated after the burst write(auto-precharge,WRITEA).
Precharge(PRE) [/RAS =L, /CAS =H,/WE =L]
PRE command deactivates the active bank indicated by BA. This command also
term inates burst read / write operation. When A10 =H at this command, both banks
are deactivated(precharge all, PREA).
Auto-Refresh(REFA) [/RAS =/CAS =L, /WE =CKE =H]
PEFA command starts auto-refresh cycle. Refresh address including bank address
are generated internally. After this command, the banks are precharged automatically.
MIT-DS-0329-0.0
MITSUBISHI
ELECTRIC
19/Jun/1999 5
5 Page 
MITSUBISHI LSIs
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
FUNCTION TRUTH TABLE FOR CKE
Current State
CK
n-1
CK
n
SELF -
HX
REFRESH*1 L H
LH
LH
LH
LH
LL
POWER
DOWN
ALL BANKS
IDLE*2
ANY STATE
other than
H
L
L
H
H
H
H
H
H
H
L
H
H
X
H
L
H
L
L
L
L
L
L
X
H
L
listed above
L
L
H
L
/S /RAS /CAS /WE Add
Action
X X X X X INVALID
H X X X X Exit Self-Refresh(Idle after tRC)
L H H H X Exit Self-Refresh(Idle after tRC)
L H H L X ILLEGAL
L H L X X ILLEGAL
L L X X X ILLEGAL
X X X X X NOP(Maintain Self-Refresh)
X X X X X INVALID
X X X X X Exit Power Down to Idle
X X X X X NOP(Maintain Self-Refresh)
X X X X X Refer to Function Truth Table
L L L H X Enter Self-Refresh
H X X X X Enter Power Down
L H H H X Enter Power Down
L H H L X ILLEGAL
L H L X X ILLEGAL
L L X X X ILLEGAL
X X X X X Refer to Current State = Power Down
X X X X X Refer to Function Truth Table
X X X X X Begin CK0 Suspend at Next Cycle*3
X X X X X Exit CK0 Suspend at Next Cycle*3
X X X X X Maintain CK0 Suspend
ABBREVIATIONS:
H = High Level, L = Low Level, X = Don't Care
NOTES:
1. CKE Low to High transition will re-enable CK and other inputs asynchronously.
A minimum setup time must be satisfied before any command other than EXIT.
2. Power-Down and Self-Refresh can be entered only form the All banks idle State.
3. Must be legal command.
MIT-DS-0329-0.0
MITSUBISHI
ELECTRIC
19/Jun/1999 11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet MH16S72BDFA-8.PDF ] | |
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