|
|
PDF PHP73N06T Data sheet ( Hoja de datos )
| Número de pieza | PHP73N06T | |
| Descripción | N-channel enhancement mode field-effect transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PHP73N06T (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
|
No Preview Available !
PHP73N06T; PHB73N06T
N-channel enhancement mode field-effect transistor
Rev. 01 — 12 March 2001
Product specification
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PHP73N06T in SOT78 (TO-220AB)
PHB73N06T in SOT404 (D2-PAK).
2. Features
s Fast switching
s Very low on-state resistance.
3. Applications
s General purpose switching
s Switched mode power supplies.
c
4. Pinningc information
Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
mb
2
drain (d)
[1]
mb
3 source (s)
mb mounting base;
connected to
drain (d)
2
MBK106
123
1 3 MBK116
SOT78 (TO-220AB)
SOT404 (D2-PAK)
Symbol
g
MBB076
d
s
[1] It is not possible to make connection to pin 2 of the SOT404 package.
1. TrenchMOS is a trademark of Royal Philips Electronics.
1 page  
Philips Semiconductors
PHP73N06T; PHB73N06T
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
ID = 250 µA; VGS = 0 V
ID = 1 mA; VDS = VGS;
Figure 10
IDSS drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Tj = 25 °C
Tj = 175 °C
VDS = 55 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 25 A;
Figure 8 and 9
Dynamic characteristics
Tj = 25 oC
Tj = 175 °C
Qg(tot) total gate charge
Qgs gate-source charge
Qgd gate-drain (Miller) charge
Ciss input capacitance
Coss output capacitance
Crss reverse transfer capacitance
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
ID = 50 A; VDD = 44 V;
VGS = 10 V; Figure 15
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 13
VDD = 30 V; RD = 1.2 Ω;
VGS = 5 V; RG = 10 Ω
VSD source-drain (diode forward) voltage IS = 25 A; VGS = 0 V;
Figure 14
trr reverse recovery time
Qr recovered charge
IS = 73 A;
dIS/dt = −100 A/µs;
VGS = −10 V; VR = 30 V
Min Typ Max Unit
55 − − V
234V
1−−V
−
0.05 10
µA
− − 500 µA
− 2 100 nA
− 12 14 mΩ
− − 28 mΩ
− 54 − nC
− 10 − nC
− 19 − nC
−
1848
2464
pF
− 421 506 pF
− 231 317 pF
− 17 26 ns
− 79 119 ns
− 57 80 ns
− 51 71 ns
−
0.85 1.2
V
− 54 − ns
− 0.12 − µC
9397 750 08107
Product specification
Rev. 01 — 12 March 2001
© Philips Electronics N.V. 2001. All rights reserved.
5 of 14
5 Page 
Philips Semiconductors
PHP73N06T; PHB73N06T
N-channel enhancement mode field-effect transistor
10. Revision history
Table 6: Revision history
Rev Date
CPCN
01 20010312 -
Description
Product specification. Initial version.
9397 750 08107
Product specification
Rev. 01 — 12 March 2001
© Philips Electronics N.V. 2001. All rights reserved.
11 of 14
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet PHP73N06T.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PHP73N06T | N-channel enhancement mode field-effect transistor | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |