|
|
PDF PHP36N06E Data sheet ( Hoja de datos )
| Número de pieza | PHP36N06E | |
| Descripción | PowerMOS transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PHP36N06E (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
Philips Semiconductors
PowerMOS transistor
Product specification
PHP36N06E
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope.
The device is intended for use in
automotive applications, Switched
Mode Power Supplies (SMPS),
motor control, welding, DC/DC and
AC/DC converters, and in general
purpose switching applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
MAX.
60
41
125
175
38
PINNING - TO220AB
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
PIN CONFIGURATION
tab
1 23
SYMBOL
d
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg
Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction temperature
-
RGS = 20 kΩ
-
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
-
-
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
-
-
-
-
-
-
- 55
-
TYP.
-
60
MAX.
60
60
30
41
29
164
125
175
175
MAX.
1.2
-
UNIT
V
A
W
˚C
mΩ
UNIT
V
V
V
A
A
A
W
˚C
˚C
UNIT
K/W
K/W
August 1996
1
Rev 1.000
1 page  
Philips Semiconductors
PowerMOS transistor
Product specification
PHP36N06E
VGS / V
12
10
8
VDS / V = 12
BUK474-60H
48
6
4
2
0
0 10 20 30 40
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 41 A; parameter VDS
IF / A
80
Tj / C =
70
60
-40
25
150
BUK474-60H
50
40
30
20
10
0
0 0.5 1 1.5 2
VSDS / V
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140
Tmb / C
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Tmb); conditions: ID = 41 A
VGS
0
RGS
L
VDS
T.U.T.
+ VDD
-
-ID/100
R 01
shunt
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 ⋅ LID2 ⋅ BVDSS/(BVDSS − VDD)
August 1996
5
Rev 1.000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet PHP36N06E.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PHP36N06E | PowerMOS transistor | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |