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Teilenummer | MA133 |
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Beschreibung | Silicon epitaxial planar type | |
Hersteller | Panasonic | |
Logo | ||
Gesamt 2 Seiten Switching Diodes
MA3S133
Silicon epitaxial planar type
For switching circuits
1.60 ± 0.1
0.80 0.80 ± 0.05
Unit : mm
I Features
• Super-small SS-mini type package contained two elements, allow-
ing high-density mounting
• Two diodes are connected in series in the package
1
3
2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Peak reverse voltage
Forward current
(DC)
Single
Series
VR
VRM
IF
80
80
100
65
Peak forward
current
Single
Series
IFM
200
130
Junction temperature
Storage temperature
Tj 150
Tstg −55 to +150
Unit
V
V
mA
mA
°C
°C
0.44 0.44
+ 0.05
0.88 − 0.03
1 : Anode 1
2 : Cathode 2
3 : Cathode 1
Anode 2
SS-Mini Type Package (3-pin)
Marking Symbol: MP
Internal Connection
1
2
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time*3
IR VR = 75 V
VF IF = 100 mA
VR IR = 100 µA
Ct*1 VR = 0 V, f = 1 MHz
Ct*2 VR = 0 V, f = 1 MHz
trr*1 IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 Ω
trr*2 IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 Ω
80
150
9
Note) 1. Rated input/output frequency: 100 MHz
2. *1 : Between pins 2 and 3
*2 : Between pins 1 and 3
*3 : trr measuring circuit
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 0.1 · IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
3
Max
100
1.2
5.5
3.0
Unit
nA
V
V
pF
pF
ns
ns
1
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ MA133 Schematic.PDF ] |
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www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |