(PDF) PF0210 Datasheet - MOS FET Power Amplifier Module for ADC Mobile Phone

Número de pieza	PF0210
Descripción	MOS FET Power Amplifier Module for ADC Mobile Phone
Fabricantes	Hitachi Semiconductor
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No Preview Available ! PF0210 MOS FET Power Amplifier Module for ADC Mobile Phone Features • High efficiency: 34% Typ for CW 30% Typ for π/4-DQPSK • Low input power: 0 dBm ave. Typ for π /4-DQPSK • Simple bias circuit • High speed switching: 8 µs Typ Pin Arrangement • RF-B2 2 51 5 4 3 ADE-208-102E (Z) Preliminary 6th Edition July 1996 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND 1 page 2nd H.D, 3rd H.D vs. Frequency (1) −20 −20 Pin = 2 mW VDD = 12.5 V −30 Pout = 6 W −30 −40 −40 −50 −50 2nd H.D −60 −60 3rd H.D −70 824 −20 −30 829 834 839 844 Frequency f (MHz) −70 849 2nd H.D, 3rd H.D vs. Frequency (2) Pin = 2 mW VDD = 12.5 V VAPC = 3.9 V −20 −30 −40 −40 −50 3rd H.D −50 −60 2nd H.D −60 −70 824 829 834 839 844 Frequency f (MHz) −70 849 PF0210 5 5 Page Package Dimensions PF0210 Unit: mm 60.5 ± 0.5 57.5 ± 0.5 R1.6 12 0.5 34 49.8 ± 0.5 13.0 ± 1 22.0 ± 1 9.2 ± 1 8.0 ± 1 Hitachi Code JEDEC EIAJ Weight (reference value) RF-B2 — — 16 g 11 11 Page

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PDF PF0210 Data sheet ( Hoja de datos )