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Teilenummer | PF01411 |
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Beschreibung | MOS FET Power Amplifier Module for E-GSM Handy Phone | |
Hersteller | Hitachi Semiconductor | |
Logo | ||
Gesamt 4 Seiten PF01411A
MOS FET Power Amplifier Module
for E-GSM Handy Phone
Application
• For E-GSM class4 880 to 915 MHz
• For 4.8V nominal battery use
Features
• High gain 3stage amplifier : 0 dBm input
• Lead less thin & Small package : 2 mm Max, 0.2cc
• High efficiency : 45% Typ at 3.8 W
• Wide gain control range : 90 dB Typ
Pin Arrangement
• RF-K
4 GG 3
G2
1G
1: Pin
2: Vapc
3: Vdd
4: Pout
G: GND
Absolute Maximum Ratings (Tc = 25°C)
Item
Supply voltage
Supply current
VAPC voltage
Input power
Operating case temperature
Storage temperature
Output power
Symbol
VDD
I DD
VAPC
Pin
Tc (op)
Tstg
Pout
Rating
10
3
4
10
–30 to +100
–30 to +100
5
ADE-208-433C (Z)
4th Edition
February 1997
Unit
V
A
V
mW
°C
°C
W
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ PF01411 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
PF01410 | MOS FET Power Amplifier Module for GSM Handy Phone | Hitachi Semiconductor |
PF01410A | MOS FET Power Amplifier Module for GSM Handy Phone | Hitachi Semiconductor |
PF01411 | MOS FET Power Amplifier Module for E-GSM Handy Phone | Hitachi Semiconductor |
PF01411A | MOS FET Power Amplifier Module for E-GSM Handy Phone | Hitachi Semiconductor |
PF01411B | MOS FET Power Amplifier Module for E-GSM Handy Phone | Hitachi Semiconductor |
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