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PF01411 Schematic ( PDF Datasheet ) - Hitachi Semiconductor

Teilenummer PF01411
Beschreibung MOS FET Power Amplifier Module for E-GSM Handy Phone
Hersteller Hitachi Semiconductor
Logo Hitachi Semiconductor Logo 




Gesamt 4 Seiten
PF01411 Datasheet, Funktion
PF01411A
MOS FET Power Amplifier Module
for E-GSM Handy Phone
Application
For E-GSM class4 880 to 915 MHz
For 4.8V nominal battery use
Features
High gain 3stage amplifier : 0 dBm input
Lead less thin & Small package : 2 mm Max, 0.2cc
High efficiency : 45% Typ at 3.8 W
Wide gain control range : 90 dB Typ
Pin Arrangement
RF-K
4 GG 3
G2
1G
1: Pin
2: Vapc
3: Vdd
4: Pout
G: GND
Absolute Maximum Ratings (Tc = 25°C)
Item
Supply voltage
Supply current
VAPC voltage
Input power
Operating case temperature
Storage temperature
Output power
Symbol
VDD
I DD
VAPC
Pin
Tc (op)
Tstg
Pout
Rating
10
3
4
10
–30 to +100
–30 to +100
5
ADE-208-433C (Z)
4th Edition
February 1997
Unit
V
A
V
mW
°C
°C
W





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