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MC-4R192CPE6C Schematic ( PDF Datasheet ) - NEC

Teilenummer MC-4R192CPE6C
Beschreibung Direct Rambus DRAM RIMM Module 192M-BYTE 96M-WORD x 16-BIT
Hersteller NEC
Logo NEC Logo 




Gesamt 16 Seiten
MC-4R192CPE6C Datasheet, Funktion
PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4R192CPE6C
Direct RambusTM DRAM RIMMTM Module
192M-BYTE (96M-WORD x 16-BIT)
Description
The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for
use in a broad range of applications including computer memory, personal computers, workstations, and other
applications where high bandwidth and low latency are required.
MC-4R192CPE6C modules consists of twelve 128M Direct Rambus DRAM (Direct RDRAM™) devices
(µPD488448). These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits. The use of
Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using
conventional system and board design technologies.
Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).
The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous,
randomly addressed memory transactions. The separate control and data buses with independent row and column
control yield over 95 % bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous transactions
per device.
Features
184 edge connector pads with 1mm pad spacing
192 MB Direct RDRAM storage
Each RDRAM® has 32 banks, for 384 banks total on module
Gold plated contacts
RDRAMs use Chip Scale Package (CSP)
Serial Presence Detect support
Operates from a 2.5 V supply
Low power and powerdown self refresh modes
Separate Row and Column buses for higher efficiency
Over Drive Factor (ODF) support
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14808EJ2V0DS00 (2nd edition)
Date Published August 2000 NS CP (K)
Printed in Japan
The mark 5 shows major revised points.
©
2000






MC-4R192CPE6C Datasheet, Funktion
MC-4R192CPE6C
Signal
RSCK
SA0
SA1
SA2
SCL
SDA
SIN
SOUT
SVDD
SWP
VCMOS
VDD
VREF
I/O Type
Description
(2/2)
I VCMOS Serial clock input. Clock source used to read from and write to the RDRAM
control registers.
I
SVDD
Serial Presence Detect Address 0.
I
SVDD
Serial Presence Detect Address 1.
I
SVDD
Serial Presence Detect Address 2.
I
SVDD
Serial Presence Detect Clock.
I/O SVDD Serial Presence Detect Data (Open Collector I/O).
I/O VCMOS Serial I/O for reading from and writing to the control registers. Attaches to SIO0
of the first RDRAM on the module.
I/O VCMOS Serial I/O for reading from and writing to the control registers. Attaches to SIO1
of the last RDRAM on the module.
— — SPD Voltage. Used for signals SCL, SDA, SWP, SA0, SA1 and SA2.
I SVDD Serial Presence Detect Write Protect (active high). When low, the SPD can be
written as well as read.
— — CMOS I/O Voltage. Used for signals CMD, SCK, SIN, SOUT.
— — Supply voltage for the RDRAM core and interface logic.
— — Logic threshold reference voltage for RSL signals.
6 Preliminary Data Sheet M14808EJ2V0DS00

6 Page









MC-4R192CPE6C pdf, datenblatt
MC-4R192CPE6C
Standard RIMM Module Marking
The RIMM modules available from NEC are marked per Figure 1 below. This marking assists users to specify and
verify if the correct RIMM modules are installed in their systems. In the diagram, a label is shown attached to the
RIMM module's heat spreader. Information contained on the label is specific to the RIMM module and provides
RDRAM information without requiring removal of the RIMM module's heat spreader.
Figure 1. RIMM Module marking example
AB
CD
JAPAN
128MB/8d nonECC
MC-4R128CEE6C-845 800-45
0020B9001
G100 S100
©1996 HCS, Inc. 800-748-0241
No. 6043B-ISO
GE
HI F
J
Label Field
Description
Marked Text
A Vendor logo
Vendor logo area
NEC
B Manufacturing Country Country of origin
JAPAN, USA, FRANCE
C Module Memory Capacity Number of 8-bit or 9-bit MBytes of RDRAM storage in 64MB, 96MB, 128MB, 192MB,
RIMM module
256MB
Number of RDRAMs
Number of RDRAM devices contained in the RIMM /4d, /6d, /8d, /12d, /16d
module
D ECC Support
Indicates whether the RIMM module supports 8-bit non ECC, ECC
(non ECC) or 9-bit (ECC) Bytes
E Part No.
NEC RIMM Part No.
See table Order information
F Memory Speed
Data transfer speed for RIMM module
800, 711, 600
tRAC Row Access Time
-45, -53
G Manufacturing Lot No. Manufactured Year code, Week code, In-house code YYWW∗∗∗∗∗
H Gerber Version
PCB Gerber file revision used on RIMM Module
G100 as Rev 1.00
I SPD Version
SPD code version
S100 as Rev 1.00
J Caution Logo
Units
MBytes
RDRAM
devices
MHz
ns
12 Preliminary Data Sheet M14808EJ2V0DS00

12 Page





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