|
|
Teilenummer | MC-4532CC727 |
|
Beschreibung | 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE | |
Hersteller | NEC | |
Logo | ||
Gesamt 16 Seiten DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4532CC727
32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE
UNBUFFERED TYPE
5 Description
The MC-4532CC727EF and MC-4532CC727PF are 33,554,432 words by 72 bits synchronous dynamic RAM
module on which 18 pieces of 128M SDRAM: µPD45128841 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
• 33,554,432 words by 72 bits organization (ECC type)
• Clock frequency and access time from CLK.
Part number
MC-4532CC727EF-A75
5
5 MC-4532CC727PF-A75
5
/CAS latency
CL = 3
CL = 2
CL = 3
CL = 2
Clock frequency
(MAX.)
133 MHz
100 MHz
133 MHz
100 MHz
Access time from CLK
(MAX.)
5.4 ns
6.0 ns
5.4 ns
6.0 ns
• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
• Pulsed interface
• Possible to assert random column address in every cycle
• Quad internal banks controlled by BA0 and BA1 (Bank Select)
• Programmable burst-length (1, 2, 4, 8 and full page)
• Programmable wrap sequence (Sequential / Interleave)
5 • Programmable /CAS latency (2, 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• All DQs have 10 Ω ±10 % of series resistor
• Single 3.3 V ± 0.3 V power supply
• LVTTL compatible
• 4,096 refresh cycles/64 ms
• Burst termination by Burst Stop command and Precharge command
• 168-pin dual in-line memory module (Pin pitch = 1.27 mm)
• Unbuffered type
• Serial PD
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14277EJ2V0DS00 (2nd edition)
Date Published January 2000 NS CP(K)
Printed in Japan
The mark • shows major revised points.
©
1999
MC-4532CC727
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
Parameter
Symbol
Test condition
5 Operating current
ICC1 Burst length = 1
/CAS latency = 2
tRC ≥ tRC(MIN.), IO = 0 mA
/CAS latency = 3
Precharge standby current in ICC2P CKE ≤ VIL(MAX.), tCK = 15 ns
5 power down mode
ICC2PS CKE ≤ VIL(MAX.), tCK = ∞
Precharge standby current in ICC2N CKE ≥ VIH(MIN.), tCK = 15 ns, /CS ≥ VIH(MIN.),
non power down mode
Input signals are changed one time during 30 ns.
ICC2NS CKE ≥ VIH(MIN.), tCK = ∞
Input signals are stable.
Active standby current in
ICC3P CKE ≤ VIL(MAX.), tCK = 15 ns
power down mode
ICC3PS CKE ≤ VIL(MAX.), tCK = ∞
Active standby current in
ICC3N CKE ≥ VIH(MIN.), tCK = 15 ns, /CS ≥ VIH(MIN.),
non power down mode
Input signals are changed one time during 30 ns.
MIN. MAX. Unit Notes
1,170 mA 1
1,215
18 mA
18
360 mA
144
90 mA
72
540 mA
5 Operating current
(Burst mode)
5 CBR (Auto) refresh current
5
Self refresh current
Input leakage current
Output leakage current
High level output voltage
Low level output voltage
ICC3NS CKE ≥ VIH(MIN.), tCK = ∞ , Input signals are stable.
360
ICC4 tCK ≥ tCK(MIN.)
/CAS latency = 2
1,350 mA
IO = 0 mA
/CAS latency = 3
1,665
ICC5 tRC ≥ tRC(MIN.)
/CAS latency = 2
2,340 mA
/CAS latency = 3
2,430
ICC6 CKE ≤ 0.2 V
36 mA
II(L) VI = 0 to 3.6 V, All other pins not under test = 0 V
– 18 + 18 µA
CKE1 –500 +500 µA
IO(L) DOUT is disabled, VO = 0 to 3.6 V
– 3 + 3 µA
VOH IO = – 4.0 mA
2.4 V
VOL IO = + 4.0 mA
0.4 V
2
3
Notes 1. ICC1 depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, ICC1 is measured on condition that addresses are changed only one time during tCK (MIN.).
2. ICC4 depends on output loading and cycle rates. Specified values are obtained with the output open. In
addition to this, ICC4 is measured on condition that addresses are changed only one time during tCK (MIN.).
3. ICC5 is measured on condition that addresses are changed only one time during tCK (MIN.).
6 Data Sheet M14277EJ2V0DS00
6 Page 5 Package Drawing
MC-4532CC727
168 PIN DUAL IN-LINE MODULE (SOCKET TYPE)
R2
F1
R1
J
M2 (AREA A)
M1 (AREA B)
A (AREA B)
Y1
Y2
Z1
Z2 F2
N
AH
B
B
I
G
K
C
D
A1 (AREA A)
S
(OPTIONAL HOLES)
E
detail of A part
W
V
X
detail of B part
D2
P
D1
Q
M
L
U1 U2
T
ITEM
A
A1
B
C
D
D1
D2
E
F1
F2
G
H
I
J
K
L
M
M1
M2
N
P
Q
R1
R2
S
T
U1
U2
V
W
X
Y1
Y2
Z1
Z2
MILLIMETERS
133.35
133.35±0.13
11.43
36.83
6.35
2.0
3.125
54.61
2.44
3.18
6.35
1.27 (T.P.)
8.89
24.495
42.18
17.78
34.93±0.13
15.15
19.78
4.0 MAX.
1.0
R2.0
4.0±0.10
9.53
φ 3.0
1.27±0.1
4.0 MIN.
4.0 MIN.
0.2±0.15
1.0±0.05
2.54±0.10
3.0 MIN.
2.26
3.0 MIN.
2.26
M168S-50A77
12 Data Sheet M14277EJ2V0DS00
12 Page | ||
Seiten | Gesamt 16 Seiten | |
PDF Download | [ MC-4532CC727 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
MC-4532CC726 | 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE | NEC |
MC-4532CC726EF-A10 | 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE | NEC |
MC-4532CC726EF-A80 | 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE | NEC |
MC-4532CC726PF-A10 | 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE | NEC |
MC-4532CC726PF-A80 | 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE | NEC |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |