MC-4516CD64ES Datasheet PDF - NEC
| Part Number | MC-4516CD64ES | |
| Description | 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM | |
| Manufacturers | NEC | |
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DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4516CD64ES, 4516CD64PS
16 M-WORD BY 64-BIT
SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
Description
The MC-4516CD64ES and MC-4516CD64PS are 16,777,216 words by 64 bits synchronous dynamic RAM module
(Small Outline DIMM) on which 8 pieces of 128 M SDRAM: µPD45128163 are assembled.
These modules provide high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
• 16,777,216 words by 64 bits organization
• Clock frequency and access time from CLK
Part number
/CAS latency
Clock frequency (MAX.)
Access time from CLK (MAX.)
MC-4516CD64ES-A10B
CL = 3
100 MHz
7 ns
5 MC-4516CD64PS-A10B
CL = 2
CL = 3
67 MHz
100 MHz
8 ns
7 ns
CL = 2
67 MHz
8 ns
• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
• Pulsed interface
• Possible to assert random column address in every cycle
• Quad internal banks controlled by BA0, BA1 (Bank Select)
• Programmable burst-length (1, 2, 4, 8 and Full Page)
• Programmable wrap sequence (Sequential / Interleave)
• Programmable /CAS latency (2, 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• Single 3.3 V ± 0.3 V power supply
• LVTTL compatible
• 4,096 refresh cycles/64 ms
• Burst termination by Burst Stop command and Precharge command
• 144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm)
• Unbuffered type
• Serial PD
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M13612EJ5V0DS00 (5th edition)
Date Published February 2000 NS CP(K)
Printed in Japan
The mark • shows major revised points.
©
1998
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MC-4516CD64ES, 4516CD64PS
Electrical Specifications
• All voltages are referenced to VSS (GND).
• After power up, wait more than 100 µs and then, execute power on sequence and CBR (Auto) refresh before proper
device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
Voltage on power supply pin relative to GND
Voltage on input pin relative to GND
Short circuit output current
Power dissipation
Operating ambient temperature
Storage temperature
VCC
VT
IO
PD
TA
Tstg
–0.5 to +4.6
–0.5 to +4.6
50
8
0 to +70
–55 to +125
V
V
mA
W
°C
°C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Supply voltage
High level input voltage
Low level input voltage
Operating ambient temperature
Symbol
VCC
VIH
VIL
TA
Condition
MIN.
3.0
2.0
–0.3
0
TYP. MAX. Unit
3.3 3.6
V
VCC + 0.3 V
+ 0.8
V
70 °C
Capacitance (TA = 25 °C, f = 1 MHz)
Parameter
Input capacitance
Data input/output capacitance
Symbol
Test condition
CI1 A0 - A11, BA0(A13), BA1(A12),
/RAS, /CAS, /WE
CI2 CLK0, CLK1
CI3 CKE0, CKE1
CI4 /CS0, /CS1
CI5 DQMB0 – DQMB7
CI/O DQ0 - DQ63
MIN.
TYP.
MAX.
60
30
30
30
20
20
Unit
pF
pF
Data Sheet M13612EJ5V0DS00
5
Preview 5 Page |
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| Information | Total 16 Pages | |
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