|
|
PDF LS832 Data sheet ( Hoja de datos )
| Número de pieza | LS832 | |
| Descripción | ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET | |
| Fabricantes | Linear Integrated Systems | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de LS832 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
LS830 LS831 LS832 LS833
Linear Integrated Systems
ULTRA LOW LEAKAGE LOW DRIFT
MONOLITHIC DUAL N-CHANNEL JFET
FEATURES
ULTRA LOW DRIFT
ULTRA LOW LEAKAGE
LOW NOISE
LOW CAPACITANCE
|∆VGS1-2 /∆T|= 5µV/°C max.
IG = 80fA TYP.
en= 70nV/√Hz TYP.
CISS= 3pf MAX.
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65° to +150°C
+150°C
Maximum Voltage and Current for Each Transistor NOTE 1
-VGSS
-VDSO
-IG(f)
-IG
Gate Voltage to Drain or Source
Drain to Source Voltage
Gate Forward Current
Gate Reverse Current
40V
40V
10mA
10µA
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
40mW @ +125°C
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS LS830 LS831 LS832
|∆VGS1-2 /∆T| max. Drift vs. Temperature
5
10 20
|VGS1-2| max.
-IG max
-IG max
-IGSS
-IGSS
Offset Voltage
Operating
High Temperature
At Full Conduction
High Temperature
25 25 25
0.1 0.1 0.1
0.1 0.1 0.1
0.2 0.2 0.2
0.5 0.5 0.5
S1 G2
G1 3
5 S2
D1
D1 2
6 D2
D2
G1 S2
22 X 20 MILS
17
S1 G2
BOTTOM VIEW
LS833
75
25
0.5
0.5
1.0
1.0
UNITS
µV/°C
mV
pA
nA
pA
nA
CONDITIONS
VDG= 10V
ID= 30µA
TA= -55°C to +125°C
VDG= 10V
ID= 30µA
TA= +125°C
VGS= 0
TA= +125°C
VGS= -20V
SYMBOL
BVGSS
BVGGO
Yfss
Yfs
|Yfs1-2/Yfs|
IDSS
|IDSS1-2/IDSS|
VGS(off) or VP
VGS
IGGO
CHARACTERISTICS
Breakdown Voltage
Gate-to-Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
Typical Operation
Mismatch
DRAIN CURRENT
Full Conduction
Mismatch at Full Conduction
GATE VOLTAGE
Pinchoff Voltage
Operating Range
GATE CURRENT
Gate-to-Gate Leakage
MIN.
40
40
TYP.
60
--
70 300
50 100
-- 1
60 400
-- 2
0.6 2
-- --
-- 1
MAX.
--
--
UNITS
V
V
CONDITIONS
VDS= 0
IG= 1nA
ID= 1nA
ID= 0
IS= 0
500
µmho VDG= 10V VGS= 0
f= 1kHz
200 µmho VDG= 10V ID= 30µA f= 1kHz
5%
1000
5
µA
%
4.5 V
4V
-- pA
VDG= 10V VGS= 0
VDS= 10V
VDG= 10V
VGG= 20V
ID= 1nA
ID= 30µA
Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet LS832.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| LS830 | ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET | Linear Integrated Systems |
| LS830 | Low Leakage |  Micross |
| LS830-3 | ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET | Linear Integrated Systems |
| LS831 | ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET | Linear Integrated Systems |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |