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PDF LMH6560 Data sheet ( Hoja de datos )
| Número de pieza | LMH6560 | |
| Descripción | Quad / High-Speed / Closed-Loop Buffer | |
| Fabricantes | National Semiconductor | |
| Logotipo |  |
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April 2003
LMH6560
Quad, High-Speed, Closed-Loop Buffer
General Description
The LMH6560 is a high speed, closed-loop buffer designed
for applications requiring the processing of very high fre-
quency signals. While offering a small signal bandwidth of
680MHz, and a very high slew rate of 3100V/µs the
LMH6560 consumes only 46mA of quiescent current for all
four buffers. Total harmonic distortion into a load of 100Ω at
20MHz is −51dBc. The LMH6560 is configured internally for
a loop gain of one. Input resistance is 100kΩ and output
resistance is but 1.5Ω. Crosstalk between the buffers is only
−55dB. These characteristics make the LMH6560 an ideal
choice for the distribution of high frequency signals on
printed circuit boards. Differential gain and phase specifica-
tions of 0.10% and 0.03˚ respectively at 3.58MHz make the
LMH6560 well suited for the buffering of video signals.
The device is fabricated on National’s high speed VIP10
process using National’s proven high performance circuit
architectures.
Features
n Closed-loop quad buffer
n 680MHz small signal bandwidth
n 3100V/µs slew rate
n 0.10% / 0.03˚ differential gain / phase
n −51dBc THD at 20MHz
n Single supply operation (3V min.)
n 80mA output current
Applications
n Multi-channel video distribution
n Video switching and routing
n High-speed analog multiplexing
n Channelized EW
n High-density buffering
n Active filters
n Broadcast and high definition TV systems
n Medical imaging
n Test equipment and instrumentation
Typical Schematic
© 2003 National Semiconductor Corporation DS200642
20064235
www.national.com
1 page  
3V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for TJ = 25˚C, V+ = 3V, V− = 0V, VO = VCM = V+/2 and RL = 100Ω to V+/2.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min Typ Max
(Note 9) (Note 8) (Note 9)
Units
Frequency Domain Response
SSBW
GFN
Small Signal Bandwidth
Gain Flatness < 0.1dB
FPBW Full Power Bandwidth (−3dB)
Time Domain Response
VO < 0.5VPP
VO < 0.5VPP
VO = 1VPP (+4.5dBm)
265 MHz
40 MHz
115 MHZ
tr Rise Time
tf Fall Time
ts Settling Time to 0.1%
OS Overshoot
1V Step (20-80%)
1V Step
0.5V Step
1.1 ns
1.3 ns
11 ns
0%
SR Slew Rate
(Note 11)
480 V/µs
Distortion And Noise Performance
HD2
2nd Harmonic Distortion
HD3
3rd Harmonic Distortion
THD
Total Harmonic Distortion
en Input-Referred Voltage Noise
CP 1dB Compression Point
VO = 0.5VPP; f = 20MHz
VO = 0.5VPP; f = 20MHz
VO = 0.5VPP; f = 20MHz
f = 1MHz
f = 10MHz
−55 dBc
−61 dBc
−54 dBc
3 nV/
+4 dBm
CT Amplifier Crosstalk
SNR
AGM
Signal to Noise Ratio
Amplifier Gain Matching
Static, DC Performance
Receiving Amplifier:
RS = 50Ω to V+/2; f = 10MHz
f = 5MHz; VO = 1VPP
RL = 2kΩ to V+/2;
f = 5MHz; VO = 1VPP
−55 dB
120 dB
0.4 dB
ACL Small Signal Voltage Gain
VOS Input Offset Voltage
VO = 100mVPP
RL = 100Ω to V+/2
VO = 100mVPP
RL = 2kΩ to V+/2
0.97
0.99
0.99
0.997
1.6
8
10
V/V
mV
TC VOS
Temperature Coefficient Input
Offset Voltage
(Note 12)
2.6 µV/˚C
IB Input Bias Current
(Note 10)
−3
−3.5
−1.4
µA
TC IB
Temperature Coefficient Input
Bias Current
(Note 12)
0.3 nA/˚C
ROUT
Output Resistance
RL = 100Ω to V+/2; f = 100kHz
RL = 100Ω to V+/2; f = 10MHz
2.1
2.8
Ω
PSRR Power Supply Rejection Ratio
VS = +3V to VS = +3.5V;
VIN = VS/2
48 65
46
dB
IS
Supply Current, All 4 Buffers
No Load
11 15 mA
18
Miscellaneous Performance
RIN Input Resistance
CIN Input Capacitance
17 kΩ
2 pF
5 www.national.com
5 Page 
Typical Performance Characteristics At TJ = 25˚C, V+ = +5V, V− = −5V; unless otherwise
specified. (Continued)
VOS vs. VSUPPLY for Unit 1
VOS vs. VSUPPLY for Unit 2
VOS vs. VSUPPLY for Unit 3
20064231
IB vs. VSUPPLY (Note 10)
20064232
ROUT vs. Frequency
20064233
PSRR vs. Frequency
20064212
20064221
11
20064222
www.national.com
11 Page | ||
| Páginas | Total 23 Páginas | |
| PDF Descargar | [ Datasheet LMH6560.PDF ] | |
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