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PDF HYS64V32300GU Data sheet ( Hoja de datos )
| Número de pieza | HYS64V32300GU | |
| Descripción | 3.3 V 32M x 64/72-Bit/ 256MByte SDRAM Modules 168-pin Unbuffered DIMM Modules | |
| Fabricantes | Infineon | |
| Logotipo |  |
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HYS 64/72V32300GU
SDRAM-Modules
3.3 V 32M x 64/72-Bit, 256MByte SDRAM Modules
168-pin Unbuffered DIMM Modules
• 168 Pin unbuffered 8 Byte Dual-In-Line
SDRAM Modules for PC main memory
applications using 256Mbit technology.
• PC100-222, PC133-333 and PC133-222
versions
• One bank 32M × 64 and 32M × 72
organisation
• Optimized for byte-write non-parity or ECC
applications
• Fully PC board layout compatible to INTEL’s
Rev. 1.0 module specification
• Programmed Latencies:
Product Speed
-7 PC133
-7.5 PC133
-8 PC100
CL tRCD
22
33
22
tRP
2
3
2
• Single + 3.3 V (± 0.3 V) power supply
• Programmable CAS Latency, Burst Length,
and Wrap Sequence (Sequential &
Interleave)
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs are LVTTL compatible
• Serial Presence Detect with E2PROM
• Uses Infineon 256 Mbit SDRAM components
in 32M × 8 organization and TSOPII-54
packages
• Gold contact pads, card size:
133.35 mm × 31.75 mm × 3.00 mm
(JEDEC MO-161-BA)
• SDRAM Performance:
fCK Clock Frequency (max.)
tAC Clock Access Time
-7 / -7.5
PC133
133
5.4
-8
PC100
100
6
Unit
MHz
ns
Description
The HYS 64V32300GU and HYS 72V32300GU are industry standard 168-pin 8-byte Dual in-line
Memory Modules (DIMMs) which are organized as 32M × 64 and 32M × 72 in 1 memory bank high
speed memory arrays designed with 256M Synchronous DRAMs (SDRAMs) for non-parity and
ECC applications. The DIMMs use -7 speed sorted 32M × 8 SDRAM devices in TSOP54 packages
to meet the PC133-222 requirement, -7.5 components for PC133-333 and -8 components for the
standard PC100 applications. Decoupling capacitors are mounted on the PC board. The PC board
design is according to INTEL’s module specification. The DIMMs have a serial presence detect,
implemented with a serial E2PROM using the 2-pin I2C protocol. The first 128 bytes are utilized by
the DIMM manufacturer and the second 128 bytes are available to the end user. All Infineon 168-
pin DIMMs provide a high performance, flexible 8-byte interface in a 133.35 mm long footprint, with
1.25“ (31.75 mm) height.
INFINEON Technologies
1
9.01
1 page  
HYS 64/72V32300GU
SDRAM-Modules
Absolute Maximum Ratings
Parameter
Symbol
Limit Values
min.
max.
Input / Output voltage relative to VSS
VIN, VOUT – 1.0
4.6
Power supply voltage on VDD
VDD
– 1.0
4.6
Storage temperature range
TSTG
-55
+150
Power dissipation per SDRAM component
PD –
1
Data out current (short circuit)
IOS –
50
Permanent device damage may occur if “Absolute Maximum Ratings” are exceeded.
Functional operation should be restricted to recommended operation conditions.
Exposure to higher than recommended voltage for extended periods of time affect device reliability
Unit
V
V
oC
W
mA
DC Characteristics
TA = 0 to 70 °C; VSS = 0 V; VDD = 3.3 V ± 0.3 V
Parameter
Input High Voltage
Input Low Voltage
Output High Voltage (IOUT = – 4.0 mA)
Output Low Voltage (IOUT = 4.0 mA)
Input Leakage Current, any input
(0 V < VIN < 3.6 V, all other inputs = 0 V)
Output Leakage Current
(DQ is disabled, 0 V < VOUT < VDD)
Symbol
Limit Values
min.
max.
VIH 2.0
VIL – 0.5
VOH 2.4
VOL –
II(L) – 40
VDD + 0.3
0.8
–
0.4
40
Unit
V
V
V
V
µA
IO(L)
– 40
40
µA
Capacitance
TA = 0 to 70 °C; VDD = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Symbol
Input Capacitance
(A0 to A11, BA0, BA1, RAS, CAS, WE)
CI1
Input Capacitance (CS0 - CS3)
CI2
Input Capacitance (CLK0 - CLK3)
CICL
Input Capacitance (CKE0)
CI3
Input Capacitance (DQMB0 - DQMB7)
CI4
Input/Output Capacitance (DQ0 - DQ63, CB0 - CB7) CIO
Input Capacitance (SCL, SA0-2)
CSC
Input/Output Capacitance
CSD
Limit Values
max.
max.
32M x 64 32M x 72
65 72
32 40
38 40
65 72
13 16
10 10
88
88
Unit
pF
pF
pF
pF
pF
pF
pF
pF
INFINEON Technologies
5
9.01
5 Page 
HYS 64/72V32300GU
SDRAM-Modules
Byte# Description
36-61 Superset Information
62 SPD Revision
63 Checksum for Bytes 0 - 62
64 Manufacturers JEDEC ID Code
65-71 Manufacturer
72 Module Assembly Locaction
73-90 Module Part Number
91-92 Module Revision Code
93-94 Module Manufacturing Code
95-98 Module Serial Number
99-125 Superset Information
126 Frequency Specification
127 100 MHz Support Details
128+ Unused Storage Locations
SPD Entry Value
–
Revision 1.2
–
–
Hex
32M x 64
-7 -7.5 -8
FF FF FF
12 12 12
F3 36 99
C1
INFINEO(N)
64 64 64
– AF AF AF
– FF
INFINEON Technologies
11
9.01
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet HYS64V32300GU.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HYS64V32300GU | 3.3 V 32M x 64/72-Bit/ 256MByte SDRAM Modules 168-pin Unbuffered DIMM Modules | Infineon |
| HYS64V32300GU-7-D | 3.3 V 32M x 64/72-Bit/ 256MByte SDRAM Modules 168-pin Unbuffered DIMM Modules | Infineon |
| HYS64V32300GU-75-C2 | 3.3 V 32M x 64/72-Bit/ 256MByte SDRAM Modules 168-pin Unbuffered DIMM Modules | Infineon |
| HYS64V32300GU-75-D | 3.3 V 32M x 64/72-Bit/ 256MByte SDRAM Modules 168-pin Unbuffered DIMM Modules | Infineon |
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