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PDF APT60GT60JRD Data sheet ( Hoja de datos )
| Número de pieza | APT60GT60JRD | |
| Descripción | The Thunderbolt IGBT is a new generation of high voltage power IGBTs. | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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APT60GT60JRD
600V 90A
Thunderbolt IGBT™ & FRED
The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs.
Using Non-Punch Through Technology the Thunderbolt IGBT™ combined
with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers
superior ruggedness and ultrafast switching speed.
• Low Forward Voltage Drop
• Low Tail Current
• High Freq. Switching to 150KHz
• Ultra Low Leakage Current
EE
G C SOT-227
ISOTOP®
"UL Recognized"
C
• Ultrafast Soft Recovery
Antiparallel Diode
MAXIMUM RATINGS (IGBT)
• RBSOA and SCSOA Rated
G
E
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT60GF60JRD
UNIT
VCES
VCGR
VGE
I C1
I C2
I CM1
I CM2
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Collector-Gate Voltage (RGE = 20KΩ)
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 25°C
Pulsed Collector Current 1 @ TC = 110°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
600
±20
90
60
180
120
375
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
Symbol Characteristic / Test Conditions
BVCES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA)
Gate Threshold Voltage (VCE = VGE, IC = 700µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 150°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
MIN TYP MAX UNIT
600
345
Volts
1.6 2.0 2.5
2.8
0.3
mA
3.0
±100 nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702-1035 Phone: (541) 382-8028
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
1 page  
+15v
0v
-15v
Vr
30µH
D.U.T.
diF/dt Adjust
PEARSON 411
CURRENT
TRANSFORMER
Figure 25, Diode Reverse Recovery Test Circuit and Waveforms
APT60GT60JRD
trr/Qrr
Waveform
1 IF - Forward Conduction Current
2
diF
/dt
-
Current
Current
Slew Rate, Rate of Forward
Change Through Zero Crossing.
3 IRRM - Peak Reverse Recovery Current.
1
Zero
4 trr - Reverse Recovery Time Measured from Point of IF
{ }Current Falling Through Zero to a Tangent Line 6 diM/dt
Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM.
5 Qrr - Area Under the Curve Defined by IRRM and trr.
2
6 diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr.
4
5
3
0.5 IRRM
0.75 IRRM
Qrr = 1/2 (trr . IRRM)
Figure 8, Diode Reverse Recovery Waveform and Definitions
6
SOT-227 (ISOTOP®) Package Outline
r = 4.0 (.157)
(2 places)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
3.3 (.129)
3.6 (.143)
* Emitter
* Emitter
1.95 (.077)
2.14 (.084)
Collector
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
Gate
Dimensions in Millimeters and (Inches)
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet APT60GT60JRD.PDF ] | |
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