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PDF APM2307 Data sheet ( Hoja de datos )
| Número de pieza | APM2307 | |
| Descripción | P-Channel Enhancement Mode MOSFET | |
| Fabricantes | Etc | |
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APM2307
P-Channel Enhancement Mode MOSFET
Features
• -30V/-3A , RDS(ON)=100mΩ(typ.) @ VGS=-10V
RDS(ON)=140mΩ(typ.) @ VGS=-4.5V
• Super High Dense Cell Design for Extremely
Low RDS(ON)
• Reliable and Rugged
• SOT-23 Package
Applications
Pin Description
D
GS
Top View of SOT-23
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
APM2307
H andling C ode
Temp. Range
Package Code
Package Code
A : SOT-23
O peration Junction Tem p. R ange
C : -5 5 to 1 5 0° C
H andling C ode
TR : Tape & Reel
APM2307 A :
M07X
X - Date Code
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Rating
Unit
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
-30
±20 V
ID* Maximum Drain Current – Continuous
IDM Maximum Drain Current – Pulsed
-3
-12 A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.3 - Jun., 2003
1
www.anpec.com.tw
1 page  
APM2307
Typical Characteristics
Source-Drain Diode Forward Voltage
10
1
TJ=150°C
TJ=25°C
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-VSD -Source-to-Drain Voltage (V)
12
10
8
6
4
2
0
0.01
Single Pulse Power
0.1 1 10
Time (sec)
100 500
Normalized Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1 D=0.05
D=0.02
0.01
1E-4
SINGLE PULSE
1E-3
0.01 0.1
1
Square Wave Pulse Duration (sec)
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=100°C/W
3.TJM-TA=PDMZthJA
10 100 500
Copyright ANPEC Electronics Corp.
Rev. A.3 - Jun., 2003
5
www.anpec.com.tw
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet APM2307.PDF ] | |
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