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Teilenummer | ZVP0540A |
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Beschreibung | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
Hersteller | Zetex Semiconductors | |
Logo | ||
Gesamt 1 Seiten P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
* 400 Volt VDS
* RDS(on)=150Ω
ZVP0540A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VDS
ID
IDM
VGS
Ptot
Tj:Tstg
DG
S
E-Line
TO92 Compatible
VALUE
-400
-45
-400
± 20
700
-55 to +150
UNIT
V
mA
mA
V
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS -400
V ID=-1mA, VGS=0V
Gate-Source
Threshold Voltage
VGS(th) -1.5 -4.5 V
ID=-1mA, VDS= VGS
Gate-Body Leakage
Zero Gate Voltage
Drain Current
IGSS
IDSS
20 nA VGS=± 20V, VDS=0V
-20 µA VDS=-400 V, VGS=0
-2 mA VDS=-320 V, VGS=0V,
T=125°C(2)
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
ID(on)
RDS(on)
-100
150
mA VDS=-25 V, VGS=-10V
Ω VGS=-10V,ID=-50mA
Forward Transconductance(1)( gfs
2)
40
mS VDS=-25V,ID=-50mA
Input Capacitance (2)
Common Source Output
Capacitance (2)
Ciss
Coss
120 pF
20 pF VDS=-25 V, VGS=0V, f=1MHz
Reverse Transfer
Capacitance (2)
Crss 5 pF
Turn-On Delay Time (2)(3)
td(on)
10 ns
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
tr
td(off)
15 ns VDD≈-25V, ID=-50mA
15 ns
Fall Time (2)(3)
tf 20 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
3-412
(
2
)
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Seiten | Gesamt 1 Seiten | |
PDF Download | [ ZVP0540A Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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