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ZVN4210A Schematic ( PDF Datasheet ) - Zetex Semiconductors

Teilenummer ZVN4210A
Beschreibung N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Hersteller Zetex Semiconductors
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Gesamt 2 Seiten
ZVN4210A Datasheet, Funktion
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt VDS
* RDS(on)= 1.5
* Spice model available
ZVN4210A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VDS
ID
IDM
VGS
Ptot
Tj:Tstg
D
G
S
E-Line
TO92 Compatible
VALUE
100
450
6
± 20
700
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS 100
V ID=1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th)
0.8
2.4
V
ID=1mA, VDS= VGS
Gate-Body Leakage
IGSS
100 nA VGS=± 20V, VDS=0V
Zero Gate Voltage Drain
Current
IDSS
10 µA VDS=100V, VGS=0
100 µA VDS=80V, VGS=0V, T=125°C(2)
On-State Drain Current(1)
ID(on)
2.5
A VDS=25V, VGS=10V
Static Drain-Source On-State RDS(on)
Resistance (1)
1.5
1.8
VGS=10V,ID=1.5A
VGS=5V,ID=500mA
Forward Transconductance(1)(2gfs
)
250
mS VDS=25V,ID=1.5A
Input Capacitance (2)
Common Source Output
Capacitance (2)
Ciss
Coss
100 pF
40 pF VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance Crss
(2)
12 pF
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
td(on)
tr
td(off)
tf
4 ns
8 ns VDD 25V, ID=1.5A
20 ns
30 ns
3-388





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