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Teilenummer | ZUMD54 |
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Beschreibung | SILICON EPITAXIAL SCHOTTKY BARRIER DIODES | |
Hersteller | Zetex Semiconductors | |
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Gesamt 2 Seiten SOT323 SILICON EPITAXIAL
SCHOTTKY BARRIER DIODES
ISSUE 1– DECEMBER 1998
1
1
ZUMD54
ZUMD54C
3 23
31
2
SINGLE
ZUMD54
Partmark: D8
COMMON CATHODE
ZUMD54C
Partmark: D8C
FEATURES: Low VF & High Current Capability
APPLICATIONS: PSU, Mobile Telecomms & SCSI
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Continuous Reverse Voltage
Forward Current
Forward Voltage @ IF =10mA
Repetitive Peak Forward Current
Non Repetitive Forward Current t<1s
Power Dissipation at Tamb=25°C
Storage Temperature Range
JunctionTemperature
¤
VR
IF
VF
IFRM
IFSM
Ptot
Tstg
Tj
VALUE
30
200
400
300
600
330
-55 to +150
125
UNIT
V
mA
mV
mA
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown Voltage V(BR)R 30 50
V IR=10µA
Forward Voltage
VF
135 240 mV IF=0.1mA
200 320 mV IF=1mA
280 400 mV IF=10mA
350 500 mV IF=30mA
530 1000 mV IF=100mA
Reverse Current
IR
1.4 2
µA VR=25V
Diode Capacitance
CD
7.5 10 pF f=1MHz,VR=1V
Reverse Recovery
Time
trr
5 ns switched from
IF=10mA to IR=10mA
RL=100Ω, IR=1mA
¤ Dual Device; For simultaneous continuous use Tj=100°C.
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ ZUMD54 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
ZUMD54 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODES | Zetex Semiconductors |
ZUMD54C | SILICON EPITAXIAL SCHOTTKY BARRIER DIODES | Zetex Semiconductors |
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