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Teilenummer | ULBM2T |
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Beschreibung | NPN SILICON RF POWER TRANSISTOR | |
Hersteller | Advanced Semiconductor | |
Logo | ||
Gesamt 1 Seiten ULBM2T
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI ULBM2T is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 0.75 A
VCB0
36 V
VCEO
16 V
VCES
36 V
VEBO
PDISS
TJ
TSTG
θJC
4.0 V
5 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
35 OC/W
PACKAGE STYLE TO-39
B
ØA
C
45°
ØD
E
F
GH
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A .200 / 5.080
B .029 / 0.740
.045 / 1.140
C .028 / 0.720
.034 / 0.860
D .335 / 8.510
.370 / 9.370
E .305 / 7.750
.335 / 8.500
F .240 / 6.100
.260 / 6.600
G .500 / 12.700
H .016 / 0.407
.020 / 0.508
ORDER CODE: ASI10676
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 25 mA
BVCES
IC = 5 mA
BVEBO
IE = 1.0 mA
ICBO
VCE = 15 V
hFE VCE = 5.0 V
IC = 100 mA
MINIMUM TYPICAL MAXIMUM
16
36
4.0
1.0
20
UNITS
V
V
V
mA
---
Cob VCB = 12 V
f = 1.0 MHz
10 pF
PG
VCC = 12.5 V
POUT = 2.0 W
f = 470 MHz
6.0
ηC
55
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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Seiten | Gesamt 1 Seiten | |
PDF Download | [ ULBM2T Schematic.PDF ] |
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