(PDF) ULBM2SL Datasheet - NPN SILICON RF POWER TRANSISTOR

Número de pieza	ULBM2SL
Descripción	NPN SILICON RF POWER TRANSISTOR
Fabricantes	Advanced Semiconductor
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No Preview Available ! ULBM2SL NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM2SL is Designed for FEATURES: • • • Omnigold™ Metalization System MAXIMUM RATINGS IC 0.75 A VCBO 36 V VCER 16 V VCES 36 V VEBO PDISS TJ TSTG θJC 4.0 V 5.0 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +150 OC 35.0 OC/W PACKAGE STYLE .280 4L PILL A ØB ØC D EF DIM MINIMUM inches / mm A .220 / 5.59 B C .275 / 6.99 D .004 / 0.10 E .050 / 1.27 F .118 / 3.00 MAXIMUM inches / mm .230 / 5.84 1.055 / 26.80 .285 / 7.24 .006 / 0.15 .060 . 1.52 .130 / 3.30 ORDER CODE: ASI10678 CHARACTERISTICS TC = 25 OC SYMBOL NONETEST CONDITIONS BVCEO IC = 25 mA BVCES IC = 5 mA BVEBO IE = 1 mA ICBO VCB = 15 V ICER VCE = 10 V RBE = 80 Ω hFE VCE = 5.0 V IC = 100 mA MINIMUM TYPICAL MAXIMUM 16 36 4.0 1.0 0.5 40 200 UNITS V V V mA mA --- Cob VCB = 7.5 V f = 1.0 MHz 10 pF PG VCC = 12.5 V POUT = 2.0 W ηC f = 470 MHz 11.5 60 dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 1 page

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PDF ULBM2SL Data sheet ( Hoja de datos )