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Número de pieza | BU4S11 | |
Descripción | Single 2-input NAND gate | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BU4S11 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Standard ICs
Single 2-input NAND gate
BU4S11
The BU4S11 is a dual-input positive logic NAND gate. This is an ultra-compact logic IC with one circuit of the
BU4011B built into an SMP package.
•Features
1) Low current dissipation.
2) Super-mini mold package designed for surface
mounting.
3) Wide range of operating power supply voltage.
4) Capable of driving two L-TTL inputs and one LS-TTL
input directly
•Block diagram
VDD
Y
54
1 23
A B VSS
•Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Power supply voltage
Power dissipation
Input current
Operating temperature
Storage temperature
Input voltage
VDD
Pd
IIN
Topr
Tstg
VIN
VSS – 0.3 ~ VSS + 18
170
± 10
– 40 ~ + 85
– 55 ~ + 150
VSS – 0.3 ~ VDD + 0.3
V
mW
mA
°C
°C
V
Note 1: These values indicate the range limits of the voltage that can be applied to each pin without
destroying it. Operation cannot be guaranteed at these values.
Note 2: Power dissipation is reduced by 1.7mW for each increase in Ta of 1°C each 25°C.
•Recommended operating conditions (Ta = 25°C, VSS = 0 V)
Parameter
Symbol Min. Typ. Max.
Power supply voltage
VDD 3 — 16
Input voltage
VIN 0 — VDD
Unit
V
V
1
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet BU4S11.PDF ] |
Número de pieza | Descripción | Fabricantes |
BU4S11 | Single 2-input NAND gate | ROHM Semiconductor |
BU4S11G2 | Single 2-Input NAND Gate | ROHM Semiconductor |
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