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PDF BTS432D2 Data sheet ( Hoja de datos )

Número de pieza BTS432D2
Descripción Smart Highside Power Switch (Clamp of negative voltage at output Short-circuit protection Current limitation Thermal shutdown)
Fabricantes Siemens Semiconductor Group 
Logotipo Siemens Semiconductor Group Logotipo



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No Preview Available ! BTS432D2 Hoja de datos, Descripción, Manual

PROFET® BTS 432 D2
Smart Highside Power Switch
Features
Product Summary
Load dump and reverse battery protection1)
Clamp of negative voltage at output
Short-circuit protection
Current limitation
Thermal shutdown
Diagnostic feedback
Open load detection in ON-state
CMOS compatible input
VLoad dump
80
Vbb-VOUT Avalanche Clamp
58
Vbb (operation)
4.5 ... 42
Vbb (reverse)
-32
RON
38
IL(SCp)
44
IL(SCr)
35
Electrostatic discharge (ESD) protection
IL(ISO)
11
Loss of ground and loss of Vbb protection2)
Overvoltage protection
Undervoltage and overvoltage shutdown with auto-restart and hysteresis
Application
µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays and discrete circuits
V
V
V
V
m
A
A
A
5
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS® chip on chip technology. Fully protected by embedded protection
functions.
2 IN
Voltage
source
V Logic
Voltage
sensor
ESD
4 ST
Logic
Overvoltage Current
Gate
protection
limit protection
R bb
+ Vbb 3
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Open load
detection
OUT
Temperature
sensor
5
Load
Short circuit
detection
GND
1
Signal GND
PROFET®
Load GND
1) No external components required, reverse load current limited by connected load.
2) Additional external diode required for charged inductive loads
Semiconductor Group
1
04.96

1 page




BTS432D2 pdf
Parameter and Conditions
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Symbol
Input and Status Feedback11)
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
Off state input current (pin 2)
Tj =-40..+150°C:
Tj =-40..+150°C:
VIN = 0.4 V:
VIN(T+)
VIN(T-)
VIN(T)
IIN(off)
BTS 432 D2
Values
Unit
min typ max
1.5 -- 2.4 V
1.0 -- -- V
-- 0.5
1 --
-- V
30 µA
On state input current (pin 2)
VIN = 3.5 V: IIN(on)
10 25 50 µA
Status invalid after positive input slope
td(ST SC)
80 200 400 µs
(short circuit)
Tj=-40 ... +150°C:
Status invalid after positive input slope
td(ST)
350 -- 1600 µs
(open load)
Tj=-40 ... +150°C:
Status output (CMOS)
Tj =-40...+150°C, IST= - 50 µA: VST(high)12) 4.4 5.1 6.5
V
Tj =-40...+150°C, IST = +1.6 mA: VST(low)
-- -- 0.4
Max. status current for
current source (out): -IST
-- -- 0.25 mA
valid status output,
current sink (in) : +IST13)
-- -- 1.6
Tj =-40...+150°C
11)
12)
If a ground resistor RGND is used, add the voltage drop across this resistor.
VSt high Vbb during undervoltage shutdown
13) No current sink capability during undervoltage shutdown
Semiconductor Group
5

5 Page





BTS432D2 arduino
Figure 3b: Turn on into overload,
IN
IL
I L(SCp)
I L(SCr)
Figure 4a: Overtemperature,
Reset if (IN=low) and (Tj<Tjt)
IN
BTS 432 D2
ST
V
OUT
ST
t
Heating up may require several milliseconds , Vbb - VOUT < 8.3 V
typ.
Figure 3c: Short circuit while on:
IN
T
J
t
*) ST goes high , when VIN=low and Tj<Tjt
Figure 5a: Open load: detection in ON-state, turn
on/off to open load
IN
ST
t
ST d(ST)
V OUT
V
OUT
I L **)
**) current peak approx. 20 µs
I
L
t
open
t
Semiconductor Group
11

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