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Número de pieza | BTS426L1E3062A | |
Descripción | Smart Highside Power Switch | |
Fabricantes | Infineon Technologies AG | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BTS426L1E3062A (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! Smart Highside Power Switch
Features
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with auto-restart
and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
PROFET® BTS426L1
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
Vbb(AZ)
Vbb(on)
RON
IL(ISO)
IL(SCr)
43 V
5.0 ... 34 V
60 mΩ
7.0 A
16 A
TO-220AB/5
5
Standard
5
1
Straight leads
1
SMD
5
Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically
integrated in Smart SIPMOS technology. Providing embedded protective functions.
2 IN
Voltage
source
V Logic
Voltage
sensor
ESD
4 ST
Logic
Overvoltage
protection
Current
limit
Gate
protection
+ Vbb 3
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Open load
Short to Vbb
detection
GND
1
Signal GND
OUT
Temperature
5
sensor
Load
RO
GND
PROFET
Load GND
1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST connection, reverse load
current limited by connected load.
Semiconductor Group
1 of 14
2003-Oct-01
1 page Parameter and Conditions
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Symbol
Input and Status Feedback12)
Input resistance
Tj=-40..150°C, see circuit page 6
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
Off state input current (pin 2), VIN = 0.4 V,
Tj =-40..+150°C
RI
Tj =-40..+150°C: VIN(T+)
Tj =-40..+150°C: VIN(T-)
∆ VIN(T)
IIN(off)
On state input current (pin 2), VIN = 3.5 V,
Tj =-40..+150°C
IIN(on)
Delay time for status with open load after switch off
(see timing diagrams, page 11), Tj =-40..+150°C
Status invalid after positive input slope
(open load)
Tj=-40 ... +150°C:
Status output (open drain)
td(ST OL4)
td(ST)
Zener limit voltage
ST low voltage
Tj =-40...+150°C, IST = +1.6 mA:
Tj =-40...+25°C, IST = +1.6 mA:
Tj = +150°C, IST = +1.6 mA:
VST(high)
VST(low)
Values
min typ
BTS426L1
Unit
max
2.5 3.5
6 kΩ
1.7 -- 3.5 V
1.5 -- -- V
-- 0.5
-- V
1 -- 50 µA
20 50 90 µA
100 520 1000 µs
-- 250 600 µs
5.4 6.1
-- V
-- -- 0.4
-- -- 0.6
12) If a ground resistor RGND is used, add the voltage drop across this resistor.
Semiconductor Group
5
2003-Oct-01
5 Page Figure 4a: Overtemperature:
Reset if Tj <Tjt
IN
ST
V
OUT
BTS426L1
Figure 5b: Open load: detection in ON-state, open load occurs in
on-state
IN
td(ST OL1)
ST
t d(ST OL2)
VOUT
T
IL normal
open
normal
J
t
t
td(ST OL1) = 20 µs typ., td(ST OL2) = 10 µs typ
Figure 5a: Open load: detection in ON-state, turn on/off to open
load
Figure 5c: Open load: detection in ON- and OFF-state (with
REXT), turn on/off to open load
IN IN
t
ST d(ST)
td(ST OL4)
ST
t
d(ST)
V
OUT
V
OUT
I
L
open
t
The status delay time td(ST OL4) allows to ditinguish between
the failure modes "open load" and "overtemperature".
I
L
Semiconductor Group
11
open
t
2003-Oct-01
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet BTS426L1E3062A.PDF ] |
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BTS426L1E3062A | Smart Highside Power Switch | Infineon Technologies AG |
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