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PDF BTS412B2E3062A Data sheet ( Hoja de datos )
| Número de pieza | BTS412B2E3062A | |
| Descripción | Smart Highside Power Switch | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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PROFET® BTS 412B2
Smart Highside Power Switch
Features
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
• CMOS diagnostic output
• Open load detection in OFF-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
Vbb(AZ)
Vbb(on)
RON
IL(ISO)
IL(SCr)
65 V
4.7 ... 42 V
220 mΩ
1.8 A
5A
TO-220AB/5
5
Standard
5
1
Straight leads
1
SMD
5
Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection
functions.
2 IN
Voltage
source
V Logic
Voltage
sensor
ESD
4 ST
Logic
Overvoltage Current
Gate
protection
limit protection
+ Vbb
3
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Open load
detection
OUT
Temperature
sensor
5
Load
Short circuit
detection
GND
1
Signal GND
PROFET®
Load GND
1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group
1
03.97
1 page  
Parameter and Conditions
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Symbol
Input and Status Feedback11)
Input resistance
see circuit page 6
RI
Input turn-on threshold voltage Tj =-40..+150°C: VIN(T+)
Input turn-off threshold voltage
Input threshold hysteresis
Tj =-40..+150°C: VIN(T-)
∆ VIN(T)
Off state input current (pin 2), VIN = 0.4 V
IIN(off)
On state input current (pin 2), VIN = 3.5 V
IIN(on)
Delay time for status with open load
after Input neg. slope (see diagram page 11)
td(ST OL3)
Status invalid after positive input slope
td(ST SC)
(short circuit)
Tj=-40 ... +150°C:
Status output (CMOS)
Tj =-40...+150°C, IST= - 50 µA:
Tj =-40...+150°C, IST = +1.6 mA:
Max. status current for
current source (out):
valid status output,
current sink (in) :
Tj =-40...+150°C
VST(high)12)
VST(low)
-IST
+IST13)
BTS 412B2
Values
Unit
min typ max
-- 9 -- kΩ
1.5 --
1.0 --
-- 0.5
1 --
10 25
-- 200
2.4 V
-- V
-- V
30 µA
70 µA
-- µs
-- -- 450 µs
4.4 5.1 6.5 V
-- -- 0.4
-- -- 0.25 mA
-- -- 1.6
11)
12)
If a ground resistor RGND is used, add the voltage drop across this resistor.
VSt high ≈ Vbb during undervoltage shutdown
13) No current sink capability during undervoltage shutdown
Semiconductor Group
5
5 Page 
Figure 3b: Turn on into overload,
IN
IL
I L(SCp)
I L(SCr)
ST
Heating up may require several seconds,
Vbb - VOUT < 8.5 V typ.
Figure 3c: Short circuit while on:
IN
ST
V OUT
I L **)
**) current peak approx. 20 µs
Semiconductor Group
Figure 4a: Overtemperature,
Reset if (IN=low) and (Tj<Tjt)
IN
BTS 412B2
ST
V
OUT
T
J
t
t
*) ST goes high , when VIN=low and Tj<Tjt
Figure 5a: Open load: detection in OFF-state, turn
on/off to open load
IN
td(ST OL3)
ST
VOUT
I
L
t
open
normal
*) t
in case of external capacity td(ST,OL3) may be higher due to high
impedance
*) IL = 30 µA typ
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet BTS412B2E3062A.PDF ] | |
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