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PDF BTS308 Data sheet ( Hoja de datos )
| Número de pieza | BTS308 | |
| Descripción | Smart Highside Power Switch | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BTS308 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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PROFET® BTS 308
Smart Highside Power Switch
Features
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in OFF-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Vbb(AZ)
Vbb(on)
RON
IL(ISO)
60 V
4.7 ... 34 V
300 mΩ
1.3 A
TO-220AB/5
5
Standard
5
1
Straight leads
1
SMD
5
Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• Most suitable for inductive loads
• Replaces electromechanical relays, fuses and discrete circuits
• Fast switching
• Not suitable for lamp loads
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
2 IN
Voltage
source
V Logic
Voltage
sensor
ESD
4 ST
Logic
Overvoltage
protection
Current
limit
Gate
protection
+ Vbb
3
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Open load
detection
OUT
Temperature
sensor
5
Load
Short circuit
detection
GND
1
Signal GND
PROFET
Load GND
1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group
Page 1 of 14
2003-Oct-01
1 page  
Parameter and Conditions
at Tj = 25 °C, Vbb = 24 V unless otherwise specified
Symbol
Input and Status Feedback8)
Input resistance
see circuit page 6
RI
Input turn-on threshold voltage
Tj =-40..+150 VIN(T+)
Input turn-off threshold voltage
Tj =-40..+150° VIN(T-)
Input threshold hysteresis, Tj =-40..+150°C
∆ VIN(T)
Off state input current (pin 2), VIN = 0.4 V,
Tj =-40..+150°C
IIN(off)
On state input current (pin 2), VIN = 3.5 V,
Tj =-40..+150°C
IIN(on)
Delay time for status with open load
after Input neg. slope (see diagram page 11)
td(ST OL3)
Status invalid after positive input slope
td(ST SC)
(short circuit)
Tj=-40 ... +150°C:
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +50 uA: VST(high)
ST low voltage Tj =-40...+150°C, IST = +1.6 mA: VST(low)
BTS 308
Values
Unit
min typ max
-- 4 -- kΩ
1.5 -- 2.4 V
0.8 -- -- V
0.2 -- -- V
8 -- 30 µA
10 22 50 µA
50 -- 400 µs
15 50 100 µs
5.4 6 -- V
-- -- 0.4
8) If a ground resistor RGND is used, add the voltage drop across this resistor.
Semiconductor Group
Page 5
2003-Oct-01
5 Page 
Figure 3c: Short circuit while on:
IN
ST
V OUT
I L **)
**) current peak approx. 20 µs
Figure 4a: Overtemperature,
Reset if (IN=low) and (Tj<Tjt)
IN
ST
V
OUT
T
J
*) ST goes high , when VIN=low and Tj<Tjt
Semiconductor Group
BTS 308
Figure 5a: Open load: detection in OFF-state, turn
on/off to open load
IN
ST td(ST OL3)
VOUT
I
L
t
open
normal
*) t
in case of external capacity td(ST,OL3) may be higher due to high
impedance
*) IL = -- µA typ
Figure 6a: Undervoltage:
IN
Vbb
V
bb(under)
Vbb(u cp)
V
bb(u rst)
V OUT
ST open drain
t
t
Page 11
2003-Oct-01
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet BTS308.PDF ] | |
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