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BTA08A-600C Schematic ( PDF Datasheet ) - ST Microelectronics

Teilenummer BTA08A-600C
Beschreibung 8A TRIACS
Hersteller ST Microelectronics
Logo ST Microelectronics Logo 




Gesamt 10 Seiten
BTA08A-600C Datasheet, Funktion
BTA/BTB08 and T8 Series
SNUBBERLESS, LOGIC LEVEL & STANDARD
8A TRIACS
MAIN FEATURES:
Symbol
IT(RMS)
VDRM/VRRM
IGT (Q1)
Value
8
600 and 800
5 to 50
Unit
A
V
mA
DESCRIPTION
Available either in through-hole or surface-mount
packages, the BTA/BTB08 and T8 triac series is
suitable for general purpose AC switching. They
can be used as an ON/OFF function in
applications such as static relays, heating
regulation, induction motor starting circuits... or for
phase control operation in light dimmers, motor
speed controllers,...
The snubberless versions (BTA/BTB...W and T8
series) are specially recommended for use on
inductive loads, thanks to their high commutation
performances. By using an internal ceramic pad,
the BTA series provides voltage insulated tab
(rated at 2500V RMS) complying with UL
standards (File ref.: E81734)
A2
A1 A2
G
DPAK
(T8-B)
A2
A2
G
A1
A1 A2
G
D2PAK
(T8-G)
A2
A1
A2
G
IPAK
(T8-H)
A2
A1
A2
G
TO-220AB Insulated
(BTA08)
A1
A2G
TO-220AB
(BTB08)
ABSOLUTE MAXIMUM RATINGS
Symbol
IT(RMS)
ITSM
It
dI/dt
IGM
PG(AV)
Tstg
Tj
Parameter
RMS on-state current (full sine wave)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
DPAK / D PAK
IPAK / TO-220AB
TO-220AB Ins.
F = 50 Hz
F = 60 Hz
Tc = 110°C
Tc = 100°C
t = 20 ms
t = 16.7 ms
I t Value for fusing
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns
Peak gate current
tp = 10 ms
F = 120 Hz
Tj = 125°C
tp = 20 µs
Tj = 125°C
Average gate power dissipation
Tj = 125°C
Storage junction temperature range
Operating junction temperature range
September 2000 - Ed: 3
Value
8
80
84
45
50
4
1
- 40 to + 150
- 40 to + 125
Unit
A
A
As
A/µs
A
W
°C
1/10






BTA08A-600C Datasheet, Funktion
BTA/BTB08 and T8 Series
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I t.
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
ITSM (A),I t (A s)
1000
100
dI/dt limitation:
50A/µs
Tj initial=25°C
ITSM
It
10
0.01
tp (ms)
0.10 1.00
10.00
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
2.5
2.0
IGT
1.5
IH & IL
1.0
0.5
Tj(°C)
0.0
-40 -20 0 20 40 60 80 100 120 140
Fig. 8-1: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values). Snubberless & Logic Level Types
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.2
2.0 TW
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
(dV/dt)c (V/µs)
1.0 10.0
T835/CW/BW
T810/SW
100.0
Fig. 8-2: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values). Standard Types
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0
1.8
1.6 C
1.4 B
1.2
1.0
0.8
0.6 (dV/dt)c (V/µs)
0.4
0.1
1.0 10.0
100.0
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
6
5
4
3
2
1
Tj(°C)
0
0 25 50 75 100 125
Fig. 10: DPAK and D2PAK Thermal resistance
junction to ambient versus copper surface under
tab (printed circuit board FR4, copper thickness:
35 µm).
Rth(j-a) (°C/W)
100
90
80
70
60
50 DPAK
40
30 D PAK
20
10 S(cm )
0
0 4 8 12 16 20 24 28 32 36 40
6/10

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