PDF PTF211301 Data sheet ( Hoja de datos )

Número de pieza	PTF211301
Descripción	LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
Fabricantes	Infineon Technologies AG
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No Preview Available ! PTF211301 LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz Description Features The PTF211301 is a 130–W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single– and two–carrier WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Two–Carrier WCDMA Drive-Up VDD = 28 V, IDQ = 1.50 A, f = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -30 35 -35 -40 IM3 -45 Ef f iciency 30 25 20 • Broadband internal matching • Typical two–carrier WCDMA performance at 2140 MHz - Average output power = 28 W - Linear Gain = 13.5 dB - Efficiency = 25% - Intermodulation distortion = –37 dBc - Adjacent channel power = –42 dBc • Typical CW performance, 2170 MHz, 28 V - Output power at P–1dB = 148 W - Efficiency = 50% • Integrated ESD protection: Human Body Model, Class 1 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 130 W (CW) output power -50 15 -55 -60 36 ACPR 10 38 40 42 44 Average Output Power (dBm) 5 46 PTF211301A Package 20260 RF Characteristics at TCASE = 25°C unless otherwise indicated WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 1.5 A, POUT = 28 W average f1 = 2140 MHz, f2 = 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF Characteristic Intermodulation Distortion Gain Drain Efficiency Symbol Min Typ IMD — –37 Gps — 13.5 ηD — 25 Max — — — Units dBc dB % Two–Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 1.5 A, POUT = 120 W PEP, f = 2170 MHz, tone spacing = 1 MHz Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Gps ηD IMD Min 12 34 — Typ 13.5 37 –30 Max — — –28 Units dB % dBc ESD: Electrostatic discharge sensitive device — observe handling precautions! Data Sheet 1 2004-01-02 1 page Test Circuit PTF211301 Reference Circit Schematic for f = 2140 MHz Circuit Assembly Information DUT PTF211301 PCB 0.76 mm. [.030”] thick, εr = 4.5 LDMOS Transistor Rogers TMM4 2 oz. copper Microstrip l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 l11 l12 l13 l14 Electrical Characteristics at 2140 MHz 0.308 λ, 54 Ω 0.059 λ, 54 Ω 0.154 λ, 45 Ω 0.132 λ, 45 Ω 0.061 λ, 13 Ω 0.012 λ, 53 Ω 0.074 λ, 7 Ω 0.409 λ, 55 Ω 0.409 λ, 55 Ω 0.029 λ, 4 Ω 0.016 λ, 5 Ω 0.067 λ, 13 Ω 0.125 λ, 43 Ω 0.411 λ, 54 Ω Dimensions: W x L (mm.) 23.24 x 1.30 4.45 x 1.30 11.43 x 1.78 9.83 x 1.78 4.22 x 10.08 0.89 x 1.32 5.00 x 17.73 30.99 x 1.22 30.99 x 1.22 1.93 x 29.72 1.52 x 25.10 1.91 x 12.90 9.32 x 1.85 30.99 x 1.30 Dimensions: W xL (in.) 0.915 x 0.051 0.175 x 0.051 0.450 x 0.070 0.387 x 0.070 0.166 x 0.397 0.035 x 0.052 0.197 x 0.698 1.220 x 0.048 1.220 x 0.048 0.076 x 1.170 0.060 x 0.988 0.075 x 0.508 0.367 x 0.073 1.220 x 0.051 Data Sheet 5 2004-01-02 5 Page

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Número de pieza	Descripción	Fabricantes
PTF211301	LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz	Infineon Technologies AG
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