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Teilenummer | QS6M3 |
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Beschreibung | Small switching | |
Hersteller | ROHM Semiconductor | |
Logo | ||
Gesamt 8 Seiten Transistors
Small switching
QS6M3
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (TSMT6).
zApplication
Power switching, DC / DC converter.
QS6M3
zExternal dimensions (Unit : mm)
TSMT6
1pin mark
2.8
1.6
Each lead has same dimensions
Abbreviated symbol : MO3
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation (TC=25°C)
Channel temperature
Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP
IS
ISP
PD
Tch
Tstg
Limits
Tr1 : Nch Tr2 : Pch
30 −20
12 −12
±1.5 ±1.5
±6.0 ±6.0
0.8 −0.75
6.0 −6.0
1.25 1.25
150 150
−55 to +150 −55 to +150
Unit
V
V
A
A ∗1
A
A ∗1
W / Total ∗2
°C
°C
zEquivalent circuit
(6) (5) (4)
∗2 ∗2
∗1 ∗1
(1) (2) (3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Tr1 (Nch) Gate
(2) Tr2 (Pch) Source
(3) Tr2 (Pch) Gate
(4) Tr2 (Pch) Drain
(5) Tr1 (Nch) Source
(6) Tr1 (Nch) Drain
zThermal resistance (Ta=25°C)
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol
Rth (ch-A)
Limits
100
Unit
°C / W / Total ∗
1/7
Transistors
N-ch
zMeasurement circuit
VGS
RG
ID
D.U.T.
VDS
RL
VDD
Fig.1-1 Switching Time Measurement Circuit
VGS
IG(Const.)
RG
ID
D.U.T.
VDS
RL
VDD
Fig.2-1 Gate Charge Measurement Circuit
QS6M3
Pulse Width
50%
VGS 10%
90% 50%
VDS
10%
10%
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.1-2 Switching Waveforms
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.2-2 Gate Charge Waveform
6/7
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ QS6M3 Schematic.PDF ] |
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