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QED123 Schematic ( PDF Datasheet ) - QT Optoelectronics

Teilenummer QED123
Beschreibung PLASTIC INFRARED LIGHT EMITTING DIODE
Hersteller QT Optoelectronics
Logo QT Optoelectronics Logo 




Gesamt 2 Seiten
QED123 Datasheet, Funktion
QED121/122/123
PLASTIC INFRARED LIGHT EMITTING DIODE
PACKAGE DIMENSIONS
0.195 (4.95)
REFERENCE
SURFACE
0.305 (7.75)
0.800 (20.3)
MIN
0.040 (1.02)
NOM
0.050 (1.25)
CATHODE
0.100 (2.54)
NOM
NOTES:
0.020 (0.51)
SQ. (2X)
0.240 (6.10)
0.215 (5.45)
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
FEATURES
!= 880 nm
• Chip material = AlGaAs
• Package type: T-1 3/4 (5mm lens diameter)
• Matched Photosensor: QSD122/123/124
• Narrow Emission Angle, 18°
• High Output Power
• Package material and color: Clear, peach tinted, plastic
1. Derate power dissipation linearly 2.67
mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are
recommended as cleaning agents.
4. Soldering iron 1/16” (1.6mm) minimum
from housing.
SCHEMATIC
ANODE
CATHODE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(2,3,4)
Soldering Temperature (Flow)(2,3)
Continuous Forward Current
Reverse Voltage
Power Dissipation(1)
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
IF
VR
PD
Rating
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
50
5
200
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C)
PARAMETER
Peak Emission Wavelength
Emission Angle
Forward Voltage
Reverse Current
Radiant Intensity QED121
Radiant Intensity QED122
Radiant Intensity QED123
Rise Time
Fall Time
1 of 2
TEST CONDITIONS
IF = 100 mA
IF = 100 mA
IF = 100 mA, tp = 20 ms
VR = 5 V
IF = 100 mA, tp = 20 ms
IF = 100 mA, tp = 20 ms
IF = 100 mA, tp = 20 ms
IF = 100 mA
SYMBOL
!PE
"
VF
IR
IE
IE
IE
tr
tf
MIN
20
50
80
TYP
880
±9
800
800
MAX
1.7
10
40
100
Unit
°C
°C
°C
°C
mA
V
mW
UNITS
nm
Deg.
V
µA
mW/sr
mW/sr
mW/sr
ns
ns
100021B





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