Datenblatt-pdf.com


RA07M1317M-01 Schematic ( PDF Datasheet ) - Mitsubishi Electric Semiconductor

Teilenummer RA07M1317M-01
Beschreibung 135-175MHz 6.5W 7.2V/ 2 Stage Amp. For PORTABLE RADIO
Hersteller Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor Logo 




Gesamt 9 Seiten
RA07M1317M-01 Datasheet, Funktion
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA07M1317M
135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO
DESCRIPTION
The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module
for 7.2-volt mobile radios that operate in the 135- to 175-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 2.5V (minimum), output power and drain
current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
VGG=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=7.2V, VGG=0V)
• Pout>6.5W @ VDD=7.2V, VGG=3.5V, Pin=20mW
ηT>45% @ Pout=6W (VGG control), VDD=7.2V, Pin=20mW
• Broadband Frequency Range: 135-175MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
BLOCK DIAGRAM
2
3
14
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
PACKAGE CODE: H46S
ORDERING INFORMATION:
ORDER NUMBER
RA07M1317M-E01
RA07M1317M-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
25 modules/tray
RA 07M1317M
MITSUBISHI ELECTRIC
1/9
25 April 2003






RA07M1317M-01 Datasheet, Funktion
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA07M1317M
TEST BLOCK DIAGRAM
Power
Meter
DUT
5
12
34
Spectrum
Analyzer
Signal
Attenuator
Pre-
Attenuator Directional
Generator
amplifier
Coupler
ZG=50
C1
C2
ZL=50
Directional
Power
Coupler
Attenuator
Meter
C1, C2: 4700pF, 22uF in parallel
-+
DC Power
Supply VGG
+-
DC Power
Supply VDD
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
EQUIVALENT CIRCUIT
2
3
1
RA 07M1317M
MITSUBISHI ELECTRIC
6/9
4
5
25 April 2003

6 Page







SeitenGesamt 9 Seiten
PDF Download[ RA07M1317M-01 Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
RA07M1317M-01135-175MHz 6.5W 7.2V/ 2 Stage Amp. For PORTABLE RADIOMitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche