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Número de pieza | RF2115L | |
Descripción | HIGH POWER UHF AMPLIFIER | |
Fabricantes | RF Micro Devices | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RF2115L (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! RF2115L
2 HIGH POWER UHF AMPLIFIER
Typical Applications
• Analog Communication Systems
• Analog Cellular Systems (AMPS & TACS)
• 900MHz Spread-Spectrum Systems
• 400MHz Industrial Radios
• Driver Stage for Higher Power Applications
• Portable Battery-Powered Equipment
2
Product Description
The RF2115L is a high power amplifier IC. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in analog cellu-
lar phone transmitters or ISM applications operating at
915MHz. The device is packaged in a 16-lead ceramic
quad leadless chip carrier with a backside ground. The
device is self-contained with the exception of the output
matching network and power supply feed line. A two-bit
digital control provides 4 levels of power control, in 10dB
steps.
.150
.050
.258
.242
1
.258
.242
R.008
.033
.017
.050
.022
.018
.025
.075
.065
.098
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
1 16 15 14
VCC3 2
VCC1 3
BIAS
CIRCUIT
13 RF OUT
12 GND
GND 4
11 RF OUT
PD 5
GAIN CONTROL
10 RF OUT
6789
Functional Block Diagram
.098
Package Style: QLCC-16
Features
• Single 5V to 6.5V Supply
• Up to 1.0W CW Output Power
• 33dB Small Signal Gain
• 48% Efficiency
• Digitally Controlled Output Power
• Small Package Outline (0.25" x 0.25")
Ordering Information
RF2115L
High Power UHF Amplifier
RF2115L PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev B1 010329
2-39
1 page RF2115L
Application Schematic
430 MHz
16 nH
4.7 nH
PD
0/5 VDC
RF IN
VCC
1 16 15 14
2
100 pF
3
4
5
100 pF
BIAS
CIRCUIT
13
12
11
GAIN CONTROL
10
6789
16 pF
15 nH
13 pF
100 pF
22 pF
22 pF
Ground Back of
Package
1
µF BIT 1 BIT 2
0V / VCC 0V / VCC
33 pF
RF OUT
15 pF
100 pF
2
Application Schematic
840 MHz
VCC 47 nH
1 µF
100 pF
180 Ω
PD
0/5 VDC
RF IN
0.01" x 0.2"
(PCB material: FR-4,
Thickness: 0.031")
100 pF
1
16 15 14
1.8 nH
2
BIAS
CIRCUIT
3
100 pF
4
13
12
11
100 pF
5
GAIN CONTROL
10
6789
2.4 pF
100 pF
100 pF
100 pF
Ground Back of
Package
BIT 1
0V / VCC
BIT 2
0V / VCC
6.8 pF
RF OUT
4.7 pF
Rev B1 010329
2-43
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet RF2115L.PDF ] |
Número de pieza | Descripción | Fabricantes |
RF2115 | HIGH POWER UHF AMPLIFIER | RF Micro Devices |
RF2115L | HIGH POWER UHF AMPLIFIER | RF Micro Devices |
RF2115LPCBA | HIGH POWER UHF AMPLIFIER | RF Micro Devices |
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