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PDF SML20B67 Data sheet ( Hoja de datos )
| Número de pieza | SML20B67 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
| Fabricantes | Seme LAB | |
| Logotipo |  |
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SML20B67
TO–247AD Package Outline.
Dimensions in mm (inches)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
15.49 (0.610)
16.26 (0.640)
3.55 (0.140)
3.81 (0.150)
0.40 (0.016)
0.79 (0.031)
2.21 (0.087)
2.59 (0.102)
123
1.65 (0.065)
2.13 (0.084)
2.87 (0.113)
3.12 (0.123)
1.01 (0.040)
1.40 (0.055)
5.25 (0.215)
BSC
Pin 1 – Gate
Pin 2 – Drain
Pin 3 – Source
D
G
S
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
VDSS
ID(cont)
RDS(on)
200V
67A
0.038W
• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• Popular TO–247 Package
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS
Drain – Source Voltage
ID Continuous Drain Current
IDM Pulsed Drain Current 1
VGS Gate – Source Voltage
VGSM
Gate – Source Voltage Transient
PD
Total Power Dissipation @ Tcase = 25°C
Derate Linearly
TJ , TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 2
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
W2) Starting TJ = 25°C, L = 0.58mH, RG = 25 , Peak IL = 67A
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
200
67
268
±20
±30
370
2.96
–55 to 150
300
67
30
1300
V
A
A
V
W
W/°C
°C
A
mJ
6/99
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet SML20B67.PDF ] | |
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