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PDF SML120L16 Data sheet ( Hoja de datos )
| Número de pieza | SML120L16 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
| Fabricantes | Seme LAB | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SML120L16 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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SML120L16
TO–264AA Package Outline.
Dimensions in mm (inches)
1.80 (0.071)
2.01 (0.079)
4.60 (0.181)
5.21 (0.205)
19.51 (0.768)
26.49 (0.807)
3.10 (0.122)
3.48 (0.137)
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
123
2.29 (0.090)
2.69 (0.106)
2.79 (0.110)
3.18 (0.125)
VDSS
ID(cont)
RDS(on)
1200V
16A
0.800W
0.48 (0.019)
0.84 (0.033)
2.59 (0.102)
3.00 (0.118)
0.76 (0.030)
1.30 (0.051)
5.45 (0.215) BSC
2 plcs.
Pin 1 – Gate
Pin 2 – Drain
Pin 3 – Source
• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• Popular TO–264 Package
D
G
S
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS
Drain – Source Voltage
ID Continuous Drain Current
IDM Pulsed Drain Current 1
VGS Gate – Source Voltage
VGSM
Gate – Source Voltage Transient
PD
Total Power Dissipation @ Tcase = 25°C
Derate Linearly
TJ , TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 2
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
W2) Starting TJ = 25°C, L = 19.53mH, RG = 25 , Peak IL = 16A
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
1200
16
64
±30
±40
520
4.16
–55 to 150
300
16
50
2500
V
A
A
V
W
W/°C
°C
A
mJ
6/99
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet SML120L16.PDF ] | |
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