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PDF SML100W18 Data sheet ( Hoja de datos )
| Número de pieza | SML100W18 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
| Fabricantes | Seme LAB | |
| Logotipo |  |
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SML100W18
TO–267 Package Outline.
Dimensions in mm (inches)
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
VDSS
ID(cont)
RDS(on)
1000V
17.3A
0.570Ω
• Faster Switching
• Lower Leakage
• TO–267 Hermetic Package
D
G
S
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS
Drain – Source Voltage
ID Continuous Drain Current
IDM Pulsed Drain Current 1
VGS Gate – Source Voltage
VGSM
Gate – Source Voltage Transient
PD
Total Power Dissipation @ Tcase = 25°C
Derate Linearly
TJ , TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 2
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting TJ = 25°C, L = 16.71mH, RG = 25Ω, Peak IL = 17.3A
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
1000
17.3
69.2
±30
±40
400
3.2
–55 to 150
300
17.3
50
2500
V
A
A
V
W
W/°C
°C
A
mJ
6/99
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet SML100W18.PDF ] | |
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