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PDF SML1001RHN Data sheet ( Hoja de datos )
| Número de pieza | SML1001RHN | |
| Descripción | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
| Fabricantes | Seme LAB | |
| Logotipo |  |
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SML1001RHN
SML901RHN0
TO–258 Package Outline.
Dimensions in mm (Inches)
17.65 (0.695)
17.39 (0.685)
6.86 (0.270)
6.09 (0.240)
1.14 (0.707)
0.88 (0.035)
123
4.19 (0.165)
3.94 (0.155)
Dia.
4TH GENERATION MOSFET
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
D
Pin 1 – Drain
5.08 (0.200)
BSC
1.65 (0.065)
1.39 (0.055)
Typ.
Pin 2 – Source
3.56 (0.140)
BSC
Pin 3 – Gate
G
S
MAXIMUM RATINGS (Tcase =25°C unless otherwise stated)
VDSS
ID
IDM
VGS
PD
TJ , TSTJ
TL
Parameter
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current 1
Gate – Source Voltage
Total Power Dissipation @ Tcase = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Lead Tempeature (0.063” from Case for 10 Sec.)
SML
901RHN 1001RHN
900 1000
10
40
±30
250
2
–55 to +150°C
300
Unit
V
A
A
V
W
W/°C
°C
STATIC ELECTRICAL RATINGS (Tcase =25°C unless otherwise stated)
Characteristic / Test Conditions / Part Number
BVDSS Drain – Source Breakdown Voltage
VGS = 0V
ID = 250mA
SML1001RHN
SML901RHN
IDSS
Zero Gate Voltage Drain Current
(VGS = 0V)
VDS = VDSS
VDS = 0.8VDSS
TC = 125°C
IGSS Gate – Source Leakage Current
VGS = ±30V
VDS = 0V
ID(ON) On State Drain Current 2
VDS > ID(ON) x RDS(ON) Max
VGS = 10V
VGS(TH) Gate Threshold Voltage
VDS = VGS ID = 1.0mA
RDS(ON) Static Drain – Source On State Resistance 2 VGS = 10V , ID = 0.5 ID [Cont.]
Min.
1000
900
Typ.
Max. Unit
V
250
1000
±100
mA
nA
10 A
2 4V
1.00 W
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
µ2) Pulse Test: Pulse Width < 380 S , Duty Cycle < 2%
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Prelim. 7/98
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet SML1001RHN.PDF ] | |
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