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Teilenummer | TIP100 |
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Beschreibung | 60V, 8A, NPN Silicon Transistor | |
Hersteller | ON Semiconductor | |
Logo | ||
Gesamt 7 Seiten TIP100, TIP101, TIP102
(NPN); TIP105, TIP106,
TIP107 (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors
Designed for general−purpose amplifier and low−speed switching
applications.
Features
• High DC Current Gain −
hFE = 2500 (Typ) @ IC
= 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 30 mAdc
VCEO(sus) = 60 Vdc (Min) − TIP100, TIP105
= 80 Vdc (Min) − TIP101, TIP106
= 100 Vdc (Min) − TIP102, TIP107
• Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC
= 3.0 Adc
= 2.5 Vdc (Max) @ IC = 8.0 Adc
• Monolithic Construction with Built−in Base−Emitter Shunt Resistors
• Pb−Free Packages are Available*
www.onsemi.com
DARLINGTON 8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−80−100 VOLTS, 80 WATTS
MARKING
DIAGRAM
12 3
4
TO−220AB
CASE 221A
STYLE 1
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
TIP10xG
AYWW
TIP10x
x
A
Y
WW
G
= Device Code
= 0, 1, 2, 5, 6, or 7
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 14
1
Publication Order Number:
TIP100/D
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
NPN
TIP100, TIP101, TIP102
PNP
TIP105, TIP106, TIP107
20,000
10,000
5000
3000
2000
1000
500
TJ = 150°C
25°C
- 55°C
VCE = 4.0 V
20,000
10,000
7000
5000
3000
2000
1000
700
500
TJ = 150°C
25°C
- 55°C
VCE = 4.0 V
300
200
0.1
300
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
200
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 9. DC Current Gain
5.0 7.0 10
3.0
2.6
2.2 IC = 2.0 A 4.0 A
6.0 A
TJ = 25°C
3.0
2.6
2.2
IC = 2.0 A
4.0 A
TJ = 25°C
6.0 A
1.8 1.8
1.4 1.4
1.0
0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30
1.0
0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 10. Collector Saturation Region
20 30
3.0
TJ = 25°C
2.5
3.0
TJ = 25°C
2.5
2.0 2.0
1.5 VBE(sat) @ IC/IB = 250
VBE @ VCE = 4.0 V
1.0 VCE(sat) @ IC/IB = 250
1.5 VBE @ VCE = 4.0 V
VBE(sat) @ IC/IB = 250
1.0 VCE(sat) @ IC/IB = 250
0.5
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
0.5
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
Figure 11. “On” Voltages
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
www.onsemi.com
6
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ TIP100 Schematic.PDF ] |
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