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TIC106 Schematic ( PDF Datasheet ) - Power Innovations Limited

Teilenummer TIC106
Beschreibung SILICON CONTROLLED RECTIFIERS
Hersteller Power Innovations Limited
Logo Power Innovations Limited Logo 




Gesamt 8 Seiten
TIC106 Datasheet, Funktion
Copyright © 1997, Power Innovations Limited, UK
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
q 5 A Continuous On-State Current
q 30 A Surge-Current
q Glass Passivated Wafer
q 400 V to 800 V Off-State Voltage
q Max IGT of 200 µA
TO-220 PACKAGE
(TOP VIEW)
K1
A2
G3
Pin 2 is in electrical contact with the mounting base.
MDC1ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
TIC106D
Repetitive peak off-state voltage (see Note 1)
TIC106M
TIC106S
TIC106N
TIC106D
Repetitive peak reverse voltage
TIC106M
TIC106S
TIC106N
Continuous on-state current at (or below) 80°C case temperature (see Note 2)
Average on-state current (180° conduction angle) at (or below) 80°C case temperature
(see Note 3)
Surge on-state current (see Note 4)
Peak positive gate current (pulse width 300 µs)
Peak gate power dissipation (pulse width 300 µs)
Average gate power dissipation (see Note 5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
VDRM
VRRM
IT(RMS)
IT(AV)
ITM
IGM
PGM
PG(AV)
TC
Tstg
TL
400
600
700
800
400
600
700
800
5
3.2
30
0.2
1.3
0.3
-40 to +110
-40 to +125
230
V
V
A
A
A
A
W
W
°C
°C
°C
NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 k.
2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate
linearly to zero at 110°C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1






TIC106 Datasheet, Funktion
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
PEAK ON-STATE VOLTAGE
vs
PEAK ON-STATE CURRENT
TC20AE
2.5
TC = 25 °C
2.0 tp = 300 µs
Duty Cycle 2 %
1.5
GATE-CONTROLLED TURN-ON TIME
vs
GATE CURRENT
10.0
TC20AF
VAA = 30 V
RL = 6
8.0 TC = 25 °C
See Test Circuit and Waveforms
6.0
1.0 4.0
0.5 2.0
0.0
0·1
1 10
ITM - Peak On-State Current - A
Figure 11.
0.0
0·1
1
IG - Gate Current - mA
Figure 12.
CIRCUIT-COMMUTATED TURN-OFF TIME
vs
CASE TEMPERATURE
TC20AG
16
14 VAA = 30 V
RL = 6
12 IRM 8 A
See Test Circuit and Waveforms
10
8
6
4
2
0
20 40 60 80 100 120
TC - Case Temperature - °C
Figure 13.
10
PRODUCT INFORMATION
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