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PDF TPC8206 Data sheet ( Hoja de datos )
| Número de pieza | TPC8206 | |
| Descripción | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPC8206
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
TPC8206
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Unit: mm
· Small footprint due to small and thin package
· Low drain-source ON resistance: RDS (ON) = 40 mΩ (typ.)
· High forward transfer admittance: |Yfs| = 7.0 S (typ.)
· Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)
· Enhancement-mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kW)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Drain power
dissipation
(t = 10 s)
(Note 2a)
Single-device
operation (Note 3a)
Single-device value
at dual operation
(Note 3b)
Drain power
dissipation
(t = 10 s)
(Note 2b)
Single-device
operation (Note 3a)
Single-device value
at dual operation
(Note 3b)
Single pulse avalanche energy
(Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD (1)
PD (2)
PD (1)
PD (2)
EAS
IAR
EAR
Tch
Tstg
60
60
±20
5
20
1.5
1.0
0.75
0.45
92
5
0.1
150
-55 to 150
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-6J1E
Weight: 0.080 g (typ.)
Circuit Configuration
8765
1234
Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
1 2003-02-18
1 page  
120
Common source
Pulse test
100
80
RDS (ON) – Ta
ID = 5 A
2.5
1.3
ID = 5 A
60
VGS = 4 V
40
2.5
1.3
20 10
0
-80 -40
0
40 80 120
Ambient temperature Ta (°C)
160
TPC8206
IDR – VDS
100
10
10
3
5
1 VGS = 0, -1 V
1
Common source
Ta = 25°C
Pulse test
0.1
0 -0.4 -0.8 -1.2 -1.6
Drain-source voltage VDS (V)
Capacitance – VDS
5000
3000
1000
500
300
Ciss
Coss
100
50 Common source
30 VGS = 0 V
Tc = 25°C
f = 1 MHz
10
0.1
1
Crss
10 100
Drain-source voltage VDS (V)
Vth – Ta
5
Common source
VDS = 10 V
4 ID = 1 mA
Pulse test
3
2
1
0
-80 -40
0
40 80 120 160
Ambient temperature Ta (°C)
2.0
1.6 (1)
1.2
(2)
0.8 (3)
(4)
0.4
PD – Ta
Device mounted on a glass-epoxy board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation
(Note 3b)
Device mounted on a glass-epoxy board (b)
(Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
operation (Note 3b)
t = 10 s
0
0 50 100 150 200
Ambient temperature Ta (°C)
Dynamic input/output characteristics
50
VDD = 48 V
40
Common source
ID = 5 A
Ta = 25°C
Pulse test
25
20
30
24
VDS
20
12
10
12
24
15
VDD = 48 V
VGS
10
5
00
0 5 10 15 20 25 30
Total gate charge Qg (nC)
5 2003-02-18
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPC8206.PDF ] | |
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