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TP0101TS Schematic ( PDF Datasheet ) - Vishay Siliconix

Teilenummer TP0101TS
Beschreibung P-Channel 20-V (D-S) MOSFET/ Low-Threshold
Hersteller Vishay Siliconix
Logo Vishay Siliconix Logo 




Gesamt 4 Seiten
TP0101TS Datasheet, Funktion
TP0101T/TS
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET, Low-Threshold
PRODUCT SUMMARY
VDS (V)
–20
rDS(on) (W)
0.65 @ VGS = –4.5 V
0.85 @ VGS = –2.5 V
ID (A)
TP0101T TP0101TS
–0.6
–0.5
–1.0
–0.9
FEATURES
D High-Side Switching
D Low On-Resistance: 0.45 W
D Low Threshold: 0.9 V (typ)
D Fast Switching Speed: 32 ns
D 2.5-V or Lower Operation
BENEFITS
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Battery Voltage Operation
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories
D Battery Operated Systems, DC/DC Converters
D Power Supply Converter Circuits
D Load/Power Switching–Cell Phones, Pagers
TO-236
(SOT-23)
G1
S2
Top View
3D
Marking Code:
TP0101T: POwll
TP0101TS: PSwll
w = Week Code
l = Lot Traceability
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
TP0101T TP0101TSc Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)b
Pulsed Drain Currenta
Continuous Source Current (Diode Conduction)b
Power Dissipationb
Operating Junction and Storage Temperature Range
TA= 25_C
TA= 70_C
TA= 25_C
TA= 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
–20
"8
–0.6
–0.48
–3
–0.6
0.35
0.22
–55 to 150
–20
"8
–1.0
–0.8
–3
–1.0
1.0
0.65
–55 to 150
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Thermal Resistance, Junction-to-Ambientb
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 10 sec.
c. Copper lead frame.
Document Number: 70229
S-04279—Rev. D, 16-Jul-01
Symbol
RthJA
TP0101T TP0101TSc Unit
357 125 _C/W
www.vishay.com
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