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PDF TODV825 Data sheet ( Hoja de datos )
| Número de pieza | TODV825 | |
| Descripción | ALTERNISTORS | |
| Fabricantes | STMicroelectronics | |
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TODV 625 ---> 1225
ALTERNISTORS
FEATURES
. HIGH COMMUTATION : > 88 A/ms (400Hz)
. INSULATING VOLTAGE = 2500V(RMS)
(UL RECOGNIZED : EB1734)
. HIGH VOLTAGE CAPABILITY : VDRM = 1200 V
A2
G
A1
DESCRIPTION
The TODV 625 ---> 1225 use high performance
passivated glass alternistor technology. Featuring
very high commutation levels and high surge cur-
rent capability, this family is well adapted to power
control on inductive load (motor, transformer...)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
Parameter
RMS on-state current
(360° conduction angle)
Tc = 80 °C
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Non repetitive surge peak on-state current
( Tj initial = 25°C )
tp = 2.5 ms
tp = 8.3 ms
I2t value
tp = 10 ms
tp = 10 ms
Critical rate of rise of on-state current
Gate supply : IG = 500mA diG/dt = 1A/µs
Repetitive
F = 50 Hz
Non
Repetitive
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
RD91
(Plastic)
Value
25
390
250
230
265
20
100
- 40 to + 150
- 40 to + 125
260
Unit
A
A
A2s
A/µs
°C
°C
°C
Symbol
Parameter
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125 °C
March 1995
TODV
Unit
625
825
1025
1225
600
800
1000
1200
V
1/5
1 page  
PACKAGE MECHANICAL DATA
RD91 Plastic
L2 a2
LI
b2
C
c2
N2
E
Marking : type number
Weight : 20 g
d1
c1
a1
N1
FB
I
A
TODV 625 ---> 1225
REF.
A
a1
a2
B
b1
b2
C
c1
c2
E
F
I
L1
L2
N1
N2
DIMENSIONS
Millimeters
Inches
Min. Max. Min. Max.
40.00
1.575
29.90 30.30 1.177 1.193
22.00
0.867
27.00
1.063
13.50 16.50 0.531 0.650
24.00
0.945
14.00
0.551
3.50 0.138
1.95 3.00 0.077 0.118
0.70 0.90 0.027 0.035
4.00 4.50 0.157 0.177
11.20 13.60 0.441 0.535
3.10 3.50 0.122 0.138
1.70 1.90 0.067 0.075
33° 43° 33° 43°
28° 38° 28° 38°
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
© 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether-
lands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
5/5
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| PDF Descargar | [ Datasheet TODV825.PDF ] | |
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