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Teilenummer | TP0202K-T1 |
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Beschreibung | P-Channel 30-V (D-S) MOSFET | |
Hersteller | Vishay Siliconix | |
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Gesamt 4 Seiten P-Channel 30-V (D-S) MOSFET
TP0202K
Vishay Siliconix
PRODUCT SUMMARY
V(BR)DSS(min) (V)
−30
rDS(on) (W)
1.4 @ VGS = −10 V
3.5 @ VGS = −4.5 V
VGS(th) (V)
−1.3 to −3.0
−1.3 to −3.0
ID (mA)
−385
−240
Qg (Typ)
1000
FEATURES
BENEFITS
APPLICATIONS
D High-Side Switching
D Low On-Resistance: 1.2 Ω (typ)
D Low Threshold: −2.0 V (typ)
D Fast Swtiching Speed: 14 ns (typ)
D Low Input Capacitance: 31 pF (typ)
D Gate-Source ESD Protection
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Easily Driven Without Buffer
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Power Supply Converter Circuits
D Solid State Relays
TO-236
(SOT-23)
G1
S2
3D
Top View
Ordering Information: TP0202K-T1
TP0202K-T1—E3 (Lead (Pb)-Free)
Marking Code: 2Kwll
2K = Part Number Code for TP0202K
w = Week Code
ll = Lot Traceability
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulse Drain Currentb
Power Dissipationa
Maximum Junction-to-Ambienta
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
VDS
VGS
ID
IDM
PD
RthJA
TJ, Tstg
−30
"20
−385
−280
−750
350
185
350
−55 to 150
Notes
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71609
S-41777—Rev. D, 04-Oct-04
Unit
V
mA
mW
_C/W
_C
www.vishay.com
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ TP0202K-T1 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
TP0202K-T1 | P-Channel 30-V (D-S) MOSFET | Vishay Siliconix |
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