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PDF TN0200T Data sheet ( Hoja de datos )
| Número de pieza | TN0200T | |
| Descripción | N-Channel 20-V (D-S) MOSFETs | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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N-Channel 20-V (D-S) MOSFETs
TN0200T/TS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.4 @ VGS = 4.5 V
0.5 @ VGS = 2.5 V
ID (A)
TN0200T TN0200TS
0.73
0.65
1.2
1.1
FEATURES
D Low On-Resistance: 0.29 W
D Low Threshold: 0.9 V (typ)
D 2.5-V or Lower Operation
D Fast Switching Speed: 22 ns
D Low Input and Output
Leakage
BENEFITS
D Low Offset Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Error Voltage
D Low Battery Voltage
Operation
APPLICATIONS
D Direct Logic-Level Interfact: TTL/CMOS
D Dirvers: Relays, Solenoids, Lamps, Hammers
D Battery Operated Systems, DC/DC Converters
D Solid-State Relays
D Load/Power Switching−Cell Phones, Pagers
TO-236
(SOT-23)
G1
S2
Top View
3D
Marking Code:
TN0200T: NOwll
TN0200TS: NSwll
w = Week Code
ll = Lot Traceability
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
TN0200T TN0200TSc
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)b
Pulsed Drain Currenta
Continuous Source Current (Diode Conduction)b
Power Dissipationb
Operating Junction and Storage Temperature Range
TA= 25_C
TA= 70_C
TA= 25_C
TA= 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20 20
"8 "8
0.73
1.2
0.58
1.0
44
0.6 1.0
0.35
1.0
0.22
0.65
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 10 sec.
c. Copper lead frame.
Document Number: 70202
S-40277—Rev. F, 23-Feb-04
Symbol
RthJA
TN0200T
357
TN0200TSc Unit
125 _C/W
www.vishay.com
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet TN0200T.PDF ] | |
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