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TN1215-1000B-TR Schematic ( PDF Datasheet ) - STMicroelectronics

Teilenummer TN1215-1000B-TR
Beschreibung SENSITIVE & STANDARD(12A SCRs)
Hersteller STMicroelectronics
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Gesamt 10 Seiten
TN1215-1000B-TR Datasheet, Funktion
®
SENSITIVE & STANDARD
TN12, TS12 and TYNx12 Series
12A SCRs
MAIN FEATURES:
Symbol
Value
Unit
IT(RMS)
12 A
VDRM/VRRM
600 to 1000
V
IGT
0.2 to 15
mA
DESCRIPTION
Available either in sensitive (TS12) or standard
(TYN, TN12...) gate triggering levels, the 12A SCR
series is suitable to fit all modes of control found in
applications such as overvoltage crowbar
protection, motor control circuits in power tools
and kitchen aids, in-rush current limiting circuits,
capacitive discharge ignition, voltage regulation
circuits...
Available in though-hole or surface-mount
packages, they provide an optimized performance
in a limited space area.
A
G
K
A
A
KA
G
DPAK
(TS12-B)
(TN12-B)
A
KA
G
D2PAK
(TN12-G)
A
KA
G
IPAK
(TS12-H)
(TN12-H)
K
A
G
TO-220AB
(TYN)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
IT(AV)
Parameter
RMS on-state current (180° conduction angle)
Average on-state current (180° conduction angle)
Tc = 105°C
Tc = 105°C
ITSM
It
dI/dt
IGM
PG(AV)
Tstg
Tj
VRGM
Non repetitive surge peak
on-state current
tp = 8.3 ms
tp = 10 ms
I t Value for fusing
Critical rate of rise of on-state
current IG = 2 x IGT , tr 100 ns
Peak gate current
tp = 10 ms
F = 60 Hz
tp = 20 µs
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage (for TN12 & TYN)
Tj = 25°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 125°C
Value
Unit
12
8
DPAK /
IPAK
115
110
60
D PAK /
TO-220AB
146
140
98
A
A
A
AS
50 A/µs
4
1
- 40 to + 150
- 40 to + 125
5
A
W
°C
V
September 2000 - Ed: 3
1/10






TN1215-1000B-TR Datasheet, Funktion
TN12, TS12 and TYNx12 Series
Fig. 8: Surge peak on-state current versus
number of cycles (TS12/TN12/TYN).
dV/dt[Rgk] / dV/dt [Rgk = 220]
10.0
Tj = 125°C
VD = 0.67 x VDRM
1.0
Rgk(k)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Fig. 10: On-state characteristics (maximum
values).
ITM(A)
200
100
Tj max.:
Vto = 0.85V
Rd = 30m
Tj = Tjmax.
10
Tj = 25°C
VTM(V)
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 9: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding values of I t.
ITSM(A),I2t(A2s)
2000
1000
100
dI/dt
limitattion
ITSM
Tjinitial=25°C
TYN/TN12
TS12
TYN/TN12
I2t
TS12
10
0.01
tp(ms)
0.10
1.00
10.00
Fig. 11: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35 µm) .
Rth(j-a)(°C/W)
100
80
60
DPAK
40
D2PAK
20
S(cm2)
0
0 2 4 6 8 10 12 14 16 18 20
6/10

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