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PDF TN0104 Data sheet ( Hoja de datos )
| Número de pieza | TN0104 | |
| Descripción | N-Channel Enhancement-Mode Vertical DMOS FETs | |
| Fabricantes | Supertex Inc | |
| Logotipo |  |
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Supertex inc.
TN0104
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
►► Low threshold (1.6V max.)
►► High input impedance
►► Low input capacitance
►► Fast switching speeds
►► Low on-resistance
►► Free from secondary breakdown
►► Low input and output leakage
Applications
►► Logic level interfaces – ideal for TTL and CMOS
►► Solid state relays
►► Battery operated systems
►► Photo voltaic drives
►► Analog switches
►► General purpose line drivers
►► Telecom switches
General Description
This low threshold, enhancement-mode (normally-off) transistor
utilizes a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination produces
a device with the power handling capabilities of bipolar
transistors and with the high input impedance and positive
temperature coefficient inherent in MOS devices. Characteristic
of all MOS structures, this device is free from thermal runaway
and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Ordering Information
Part Number
Package Option
TN0104N3-G
TO-92
TN0104N3-G P002
TN0104N3-G P003
TN0104N3-G P005 TO-92
TN0104N3-G P013
TN0104N3-G P014
TN0104N8-G
TO-243AA (SOT-89)
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Packing
1000/Bag
2000/Reel
2000/Reel
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BVDSS
BVDGS
±20V
Operating and storage temperature
-55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
Typical Thermal Resistance
Package
TO-92
θja
132OC/W
TO-243AA (SOT-89)
133OC/W
Product Summary
BVDSX/BVDGX
RDS(ON)
(max)
40V 1.8Ω
Pin Configuration
IDSS
(min)
2.0A
SOURCE
DRAIN
GATE
TO-92
DRAIN
SOURCE
DRAIN
GATE
TO-243AA (SOT-89)
Product Marking
SiTN
0104
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92
TN1LW
W = Code for Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-243AA (SOT-89)
Doc.# DSFP-TN0104
C080813
Supertex inc.
www.supertex.com
1 page  
Typical Performance Curves (cont.)
BVDSS Variation with Temperature
1.3
1.2
1.1
1.0
0.9
0.8-50
0 50 100
Tj (OC)
150
Transfer Characteristics
3.0
VDS = 25V
TA = -55OC
25OC
2.4
1.8
125OC
1.2
0.6
0
0 2 4 6 8 10
VGS (volts)
Capacitance vs. Drain-to-Source Voltage
100
f = 1MHz
75
CISS
50
25
COSS
CRSS
0
0
10
20 30
40
VDS (volts)
TN0104
On-Resistance vs. Drain Current
10
VGS = 5.0V
8
6
VGS = 10V
4
2
00 1 2
ID (amperes)
V1.4(th)
and
RDS
Variation
with
Temperature
1.4
1.2 1.2
1.0
0.8 V(th) @ 0.5mA
0.6
RDS(ON) @ 5.0V, 0.25A 1.0
0.8
0.6
0.4
-50
0 50 100
Tj (OC)
0.4
150
Gate Drive Dynamic Characteristics
10
VDS = 10V
8
55pF
40V
6
4
2
0
0.50
50pF
0.65
0.80
0.95
1.10
QG (nanocoulombs)
1.25
Doc.# DSFP-TN0104
C080813
Supertex inc.
5 www.supertex.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TN0104.PDF ] | |
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