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PDF TPV8100B Data sheet ( Hoja de datos )
| Número de pieza | TPV8100B | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Motorola Inc | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
The TPV8100B is designed for output stages in band IV and V TV transmitter
amplifiers. It incorporates high value emitter ballast resistors, gold metalliza-
tions and offers a high degree of reliability and ruggedness.
Including double input and output matching networks, the TPV8100B
features high impedances. It can easily operate in a full 470 MHz to 860 MHz
bandwidth in a single and simple circuit.
• To be used class AB for TV band IV and V.
• Specified 28 Volts, 860 MHz Characteristics
Output Power = 125 Watts (peak sync.)
Output Power = 100 Watts (CW)
Minimum Gain = 8.5 dB
• Specified 32 Volts, 860 MHz Characteristics
Output Power = 150 Watts (peak sync.)
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
Order this document
by TPV8100B/D
TPV8100B
150 W, 470 – 860 MHz
NPN SILICON
RF POWER TRANSISTOR
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Current — Continuous
Total Device Dissipation @ 25°C Case
Derate above 25°C
Operating Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA, Rbe = 75 Ω)
V(BR)CER
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc)
V(BR)EBO
Collector–Base Breakdown Voltage
(IE = 20 mAdc)
V(BR)CBO
Collector–Emitter Leakage
(VCE = 28 V, Rbe = 75 Ω)
ICER
NOTE:
1. Thermal resistance is determined under specified RF operating condition.
Symbol
VCER
VCBO
VEBO
IC
PD
TJ
Tstg
Symbol
RθJC
Min
30
4
65
—
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
CASE 398–03, STYLE 1
Value
40
65
4
12
215
1.25
200
– 65 to +150
Max
0.8
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
— 10 mA
(continued)
TPV8100B
1
1 page  
TYPICAL VIDEO CHARACTERISTICS @ f = 800 MHz
VCE = 32 V
100
IRE
0
40
Black
VIDEO SIGNAL
150
100
TEST CONDITIONS:
STANDARD BLACK LEVEL
CHANNEL 61
50 ICQ = 2 x 25 mA
VCE = 32 V
20
246
8 10 12 14 16
Pin, INPUT POWER (WATTS)
Figure 8. Peak Output Power versus Peak
Input Power
VCE = 32 V, ICQ = 2 x 25 mA
Pout
Gain
25 W
50 W
100 W
120 W
130 W
140 W
150 W
160 W
10.6 dB
11.1 dB
11.3 dB
11.1 dB
11.0 dB
10.7 dB
10.5 dB
10.2 dB
(see curve on left)
TEST CONDITIONS:
DIFF. Gain, 10 Steps
Channel 61
VCE = 32 V
ICQ = 2 x 25 mA
%
100
90
80
70
60
50
40
30
20
10
0
Pout = 100 W
Pout = 130 W
100
IRE
0
40
%
100
90
80
70
60
50
40
30
20
10
0
Figure 9. Differential Gain
VIDEO SIGNAL
Pout = 150 W
MOTOROLA RF DEVICE DATA
TPV8100B
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TPV8100B.PDF ] | |
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